US3686684A
Expired / Lapsed
US
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Semiconductor circuits
Assignee: Sony Corp
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Filing: 1970-05-26
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Granted: 1972-08-22
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Expires: 1990-05-26
Abstract
Abstract An electric circuit which exhibits negative impedance characteristics. Several embodiments are shown for producing ''''N'''' shape, ''''S'''' shape, and modified ''''N'''' shape negative impedance characteristics. The circuit includes a semiconductor device of the kind having three independent regions on a substrate, and a pair of bias sources; one source is applied between two of the regions, and the other is applied at least to the third region. By suitable bias arrangements the negative impedances are produced.
Inventors
- 👤 Takeshi Matsushita
- 👤 Hajime Yagi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 20:22
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/26; H10D; H10D99/00
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
113 words
A circuit comprising a semiconductor device having a low conductivity substrate with three higher conductivity regions therein and on one plane surface thereof, a first one of said regions being of one conductivity type, a second of said regions being of the opposite conductivity type, and a third of said regions being of said one conductivity type; means for forwardly biasing said first and second regions; means for biasing said third region and wherein the distance between said first and third regions is less than the distance between said third and second regions, and the distance between said first and second regions is more than the distance between said second and third regions.
Claim 2
Dependent Claim
113 words
A circuit comprising a semiconductor device having a low conductivity substrate with three higher conductivity regions therein and on one plane surface thereof, a first one of said regions being of one conductivity type, a second of said regions being of the opposite conductivity type, and a third of said regions being of said one conductivity type; means for forwardly biasing said first and second regions; means for biasing said third region and wherein the distance between said first and third regions is less than the distance between said third and second regions, and the distance between said first and second regions is more than the distance between said second and third regions.
Claim 3
Dependent Claim
106 words
A circuit comprising a semiconductor device having a low conductivity substrate with three higher conductivity regions therein, a first one of said regions being of one conductivity type, a second of said regions being of the opposite conductivity type, and a third of said regions being of said one conductivity type; means for forwardly biasing said first and Second regions; and means for biasing said third region, the distance between said first and third regions being less than a distance between said third and second regions, and the distance between said first and second regions being greater than the distance between said second and third regions.
Claim 4
Dependent Claim
106 words
A circuit comprising a semiconductor device having a low conductivity substrate with three higher conductivity regions therein, a first one of said regions being of one conductivity type, a second of said regions being of the opposite conductivity type, and a third of said regions being of said one conductivity type; means for forwardly biasing said first and Second regions; and means for biasing said third region, the distance between said first and third regions being less than a distance between said third and second regions, and the distance between said first and second regions being greater than the distance between said second and third regions.
Claim 5
Dependent Claim
53 words
A circuit according to claim 2, wherein said bias means for the third region selectively reversed biases and forward biases said third region for producing a negative impedance between said regions of one conductivity and the region of the opposite conductivity as said bias means forward biases and back biases said third region.
Claim 6
Dependent Claim
48 words
A circuit according to claim 3, wherein said third biasing means is adapted to apply reverse and forward bias to the third region to partially forward bias that portion of said third region which is nearest to the second region and thereby reduce the impedance of the device.
Claim 7
Dependent Claim
42 words
A circuit according to claim 3, wherein said first and second region bias means includes a voltage source connected between the first and second regions, and said third region bias means includes a voltage source connected between said third and second regions.
Claim 8
Dependent Claim
36 words
A circuit according to claim 5, wherein the operating range of the third region bias means is variable and extends in amplitude above and below the voltage amplitude of the first and second region bias means.
Claim 9
Dependent Claim
23 words
A circuit according to claim 6, wherein said first and third regions are of P-type impurity and the second region of N-type impurity.
Claim 10
Dependent Claim
34 words
A circuit according to claim 7, wherein the two voltage sources are referenced to the second region and provide positive voltage to the first and third regions while operating in the negative impedance region.
Claim 11
Dependent Claim
23 words
A circuit according to claim 6, wherein said first and third regions are of N-type impurity and the second region of P-type impurity.
Claim 12
Dependent Claim
34 words
A circuit according to claim 9, wherein the two voltage sources are referenced to the second region to provide negative voltage to the first and third regions while operating in the negative impedance region.
Claim 13
Dependent Claim
25 words
A circuit according to claim 5, wherein a light signal is applied to said substrate to modulate the impedance of the device in the circuit.
Claim 14
Dependent Claim
25 words
A circuit according to claim 5, wherein a magnetic field is applied to said substrate to modulate the impedance of said device in the circuit.
Claim 15
Dependent Claim
19 words
A circuit according to claim 2, wherein said third region bias means is for back biasing said third region.
Claim 16
Dependent Claim
39 words
A circuit according to claim 13, wherein said third region bias means includes means for providing a predetermined bias, and means are provided for connecting a load with the forward bias means and varying the amplitude of said means.
Claim 17
Dependent Claim
39 words
A circuit according to claim 14, wherein said forward bias means includes a voltage source connected between the first and second regions, and said third region bias means includes a voltage source connected between said third and second regions.
Claim 18
Dependent Claim
56 words
A circuit according to claim 15, wherein said first and third regions are of P-type impurity and the second region of N-type impurity, and the forward voltage sources is connected to apply a positive voltage to the first region, and the third region voltage source is connected to apply a negative voltage to the third region.
Claim 19
Dependent Claim
55 words
A circuit according to claim 15, wherein said first and third regions are of N-type impurity and the second region of P-type impurity, and the forward voltage source is connected to provide a negative voltage to the first region, and the third region source is connected to apply a positive voltage to the third region.
Claim 20
Dependent Claim
39 words
A circuit according to claim 14, wherein said forward bias means includes a voltage source connected between the first and second regions, and said third region bias means includes a voltage source connected between said first and third regions.
Claim 21
Dependent Claim
21 words
A circuit according to claim 14, wherein said third region bias means includes a current soUrce connected to said third region.
Claim 22
Dependent Claim
39 words
A circuit according to claim 13, wherein said forward bias means includes means for providing a predetermined bias, and means are provided for connecting a load with the third region bias means and varying the amplitude of said means.
Claim 23
Dependent Claim
39 words
A circuit according to claim 20, wherein said forward bias means includes a voltage source connected between the first and second regions, and said third region bias means includes a voltage source connected between said first and third regions.
Claim 24
Dependent Claim
55 words
A circuit according to claim 21, wherein said first and third regions are of P-type impurity and the second region of N-type impurity, and the forward voltage sources are connected with a positive voltage to the first region, and the third region voltage source is connected to apply a negative voltage to the third region.
Claim 25
Dependent Claim
56 words
A circuit according to claim 21, wherein said first and third regions are of N-type impurity and the second region of P-type impurity, and the forward voltage source is connected to provide a negative voltage to the first region, and the third region voltage source is connected to apply a positive voltage to the third region.
Claim 26
Dependent Claim
20 words
A circuit according to claim 20, wherein said forward bias means includes a current source connected to said second region.
Claim 27
Dependent Claim
25 words
A circuit according to claim 13, wherein a light signal is applied to said substrate to vary the impedance of the device in the circuit.
Claim 28
Dependent Claim
25 words
A circuit according to claim 13, wherein a magnetic field is applied to said substrate to vary the impedance of said device in the circuit.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-08-22 | 1976-02-21 | 1976-08-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-08-22 | 1980-02-21 | 1980-08-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-08-22 | 1984-02-21 | 1984-08-22 | $7700.00 | Window Closed / Lapsed |