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US4131472A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for increasing the yield of batch processed microcircuit semiconductor devices

Assignee: Align Rite Corp
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Filing: 1976-09-15
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Granted: 1978-12-26
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Expires: 1996-09-15
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Abstract

Abstract An improvement in the process of manufacturing integrated circuits to enhance the yield, including the steps of tracking which of the individual dies on a photomask or related series of photomasks has produced a predominance of defective chips on the semiconductor wafer, then correcting the die images on the master photomasks and then producing new working masks. This procedure may be repeated several times, each time reducing the number of defect-bearing die images on the photomask and thereby providing a means by which a semiconductor device manufacturer can obtain better yields.

Inventors

  • 👤 James L. MacDonald, Jr.
  • 👤 Richard A. Mink

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 05:04
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/68; G03F1/72; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49764

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 144 words
Method of improving the yield of batch processed microcircuit semiconductor devices, comprising the steps of: producing a master photomask for each layer of a semiconductor microcircuit, each said photomask comprising a plurality of identical dies imprinted upon a transparent plate covering said plate with said identical die images disposed in a dimensionally controlled matrix; photographically marking each die in said matrix with unique indicia; producing from each said master photomask a working plate, using such working plates for all required layers of the device to produce a batch of semiconductor devices, inspecting such devices, and recording the indicia of all defective devices; inspecting the individual dies of the master photomasks indicated by such recorded indicia and repairing those dies found to be defective, then producing from said repaired master photomasks new working plates, and using such plates to produce further batches of semiconductor devices.
Claim 2
Dependent Claim 144 words
Method of improving the yield of batch processed microcircuit semiconductor devices, comprising the steps of: producing a master photomask for each layer of a semiconductor microcircuit, each said photomask comprising a plurality of identical dies imprinted upon a transparent plate covering said plate with said identical die images disposed in a dimensionally controlled matrix; photographically marking each die in said matrix with unique indicia; producing from each said master photomask a working plate, using such working plates for all required layers of the device to produce a batch of semiconductor devices, inspecting such devices, and recording the indicia of all defective devices; inspecting the individual dies of the master photomasks indicated by such recorded indicia and repairing those dies found to be defective, then producing from said repaired master photomasks new working plates, and using such plates to produce further batches of semiconductor devices.
Claim 3
Dependent Claim 170 words
Method for improving the yield of batch processed microcircuit semiconductor devices, comprising the steps of: photographically printing upon separate transparent plates images representing the physical layout of the layers of a microcircuit, each such image on said plate comprising a single die master reticle; photographically reducing and reproducing each said single die master reticle on a second transparent plate a multitude of times in a dimensionally controlled matrix to form a master photomask; photographically marking each reproduction of said die image in said matrix with different indicia; producing from each said marked master photomasks a working plate, using the working plates thus made for each layer of the semiconductor device to produce a batch of semiconductor devices; testing the finished devices for defects and recording the aforesaid indicia of defective devices; inspecting those individual die images of the master photomasks indicated by said recorded indicia and repairing said die images where possible, then producing therefrom new working plates and using said working plates to produce further batches of semiconductor devices.
Claim 4
Dependent Claim 170 words
Method for improving the yield of batch processed microcircuit semiconductor devices, comprising the steps of: photographically printing upon separate transparent plates images representing the physical layout of the layers of a microcircuit, each such image on said plate comprising a single die master reticle; photographically reducing and reproducing each said single die master reticle on a second transparent plate a multitude of times in a dimensionally controlled matrix to form a master photomask; photographically marking each reproduction of said die image in said matrix with different indicia; producing from each said marked master photomasks a working plate, using the working plates thus made for each layer of the semiconductor device to produce a batch of semiconductor devices; testing the finished devices for defects and recording the aforesaid indicia of defective devices; inspecting those individual die images of the master photomasks indicated by said recorded indicia and repairing said die images where possible, then producing therefrom new working plates and using said working plates to produce further batches of semiconductor devices.
Claim 5
Dependent Claim 69 words
The method of claim 2 further including the steps of: testing the further batch of devices for defects and again recording the indicia of defective devices, again inspecting those individual die images of the master photomasks indicated to be defective by said recorded indicia and repairing said die images where possible, then producing further new working plates and using the same to produce still further batches of semiconductor devices.
Claim 6
Dependent Claim 268 words
Method of improving the yield of batch processed microcircuit semiconductor devices, comprising the steps of: from a logic or schematic circuit diagram of the desired device, first forming a composite drawing composed of the geometrical pattern of the circuit components and circuit paths of the device, said composite consisting of two or more layers superimposed upon a single sheet and being substantially larger than the actual size of the finished device; separating the composite drawing into individual layers and photographically producing for each layer a single die master reticle; photographically reducing the reticle image of each die image to actual size and imprinting said reduced image upon a transparent plate a plurality of times to cover said plate with multiple images of the same die image disposed in a dimensionally controlled matrix thereby providing a master photomask for each layer of said device; photographically marking each die image in the matrix of each of said master photomasks with unique indicia, said indicia being placed within the individual die image pattern at an unused location; producing from each of said master photomasks at least one working plate; producing a first batch of semiconductor devices from the plurality of working plates comprising all of the die images representing the requisite layers of the device, testing such devices for defects and recording the indicia from defective devices; inspecting the individual die images of the photomasks indicated by such recorded indicia and repairing those die images found to contain repairable defects, then producing from said repaired photomasks new working plates and using such new plates to produce further batches of semiconductor devices.
Claim 7
Dependent Claim 268 words
Method of improving the yield of batch processed microcircuit semiconductor devices, comprising the steps of: from a logic or schematic circuit diagram of the desired device, first forming a composite drawing composed of the geometrical pattern of the circuit components and circuit paths of the device, said composite consisting of two or more layers superimposed upon a single sheet and being substantially larger than the actual size of the finished device; separating the composite drawing into individual layers and photographically producing for each layer a single die master reticle; photographically reducing the reticle image of each die image to actual size and imprinting said reduced image upon a transparent plate a plurality of times to cover said plate with multiple images of the same die image disposed in a dimensionally controlled matrix thereby providing a master photomask for each layer of said device; photographically marking each die image in the matrix of each of said master photomasks with unique indicia, said indicia being placed within the individual die image pattern at an unused location; producing from each of said master photomasks at least one working plate; producing a first batch of semiconductor devices from the plurality of working plates comprising all of the die images representing the requisite layers of the device, testing such devices for defects and recording the indicia from defective devices; inspecting the individual die images of the photomasks indicated by such recorded indicia and repairing those die images found to contain repairable defects, then producing from said repaired photomasks new working plates and using such new plates to produce further batches of semiconductor devices.
Claim 8
Dependent Claim 86 words
The method of claim 4 further including the steps of: testing the further batch of devices for defects and again recording the indicia of defective devices, again inspecting those individual die images of the master photomasks indicated to be defective by said recorded indicia and repairing said die images where possible, then producing further new working plates and using the same to produce still further batches of semiconductor devices, and repeating said testing and repairing steps until repairable defects in the master photomasks are substantially eliminated.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1981-12-25 1982-06-26 1982-12-26 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1985-12-25 1986-06-26 1986-12-26 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1989-12-25 1990-06-26 1990-12-26 $7700.00 Window Closed / Lapsed

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