Dual port random access memory storage cell

Claim 2

A dual port memory cell comprising: a first storage cell having first and second cross-coupled switching means; first selecting means coupled to said first and second switching means for effecting selection of said first storage cell; a second storage cell having third and fourth cross-coupled switching means; second selection means coupled to said third and fourth switching means for effecting selection of said second storage cell; first unidirectional means responsive to a control electrode of said first switching means coupled to a corresponding control electrode of said third switching means for causing said third switching means to be switched on if said first switching means is on, said first storage cell is selected, and said second storage cell is unselected.

Claim 3

A dual port memory cell comprising: (a) a first storage cell including first and second cross-coupled transistors, (b) first selection means coupled to said first storage cell for selecting said first storage cell, (c) a second storage cell including third and fourth cross-coupled transistors, (d) second selection means coupled to said second storage cell for selecting said second storage cell, and (e) coupling means responsive to said first and second selection means for coupling said first storage cell to said second storage cell and for causing a state stored in a selected one of said storage cells to be also stored in an unselected other of said storage cells, said coupling means including first, second, third, and fourth coupling transistors, said first and second coupling transistor each having its base coupled to the base of said first and second cross-coupled transistor, respectively, and its emitter coupled to the base of said third and fourth cross-coupled transistor, respectively, and said third and fourth coupling transistor each having its base coupled to the base of said third and fourth cross-coupled transistor, respectively, and its emitter coupled to the base of said first and second cross-coupled transistors, respectively.

Claim 4

A dual port memory cell comprising: (a) a first storage cell including first and second cross-coupled transistors, (b) first selection means coupled to said first storage cell for selecting said first storage cell, (c) a second storage cell including third and fourth cross-coupled transistors, (d) second selection means coupled to said second storage cell for selecting said second storage cell, and (e) coupling means responsive to said first and second selection means for coupling said first storage cell to said second storage cell and for causing a state stored in a selected one of said storage cells to be also stored in an unselected other of said storage cells, said coupling means including first, second, third, and fourth coupling transistors, said first and second coupling transistor each having its base coupled to the base of said first and second cross-coupled transistor, respectively, and its emitter coupled to the base of said third and fourth cross-coupled transistor, respectively, and said third and fourth coupling transistor each having its base coupled to the base of said third and fourth cross-coupled transistor, respectively, and its emitter coupled to the base of said first and second cross-coupled transistors, respectively.

Claim 5

A dual port memory cell comprising: (a) a first storage cell including first and second cross-coupled transistors, (b) first selection means coupled to said first storage cell for selecting said first storage cell, (c) a second storage cell including third and fourth cross-coupled transistors, (d) second selection means coupled to said second storage cell for selecting said second storage cell, and (e) coupling means responsive to said first and second selection means for coupling said first storage cell to said second storage cell and for causing a state stored in a selected one of said storage cells to be also stored in an unselected other of said storage cell, said coupling means including a first pair of reverse parallel coupled diodes coupled between the collectors of said first and third cross-coupled transistors and also including a second pair of reverse parallel coupled diodes coupled between the collectors of said second and fourth cross-coupled transistors.

Claim 6

A dual port memory cell comprising: (a) a first storage cell including first and second cross-coupled transistors, (b) first selection means coupled to said first storage cell for selecting said first storage cell, (c) a second storage cell including third and fourth cross-coupled transistors, (d) second selection means coupled to said second storage cell for selecting said second storage cell, and (e) coupling means responsive to said first and second selection means for coupling said first storage cell to said second storage cell and for causing a state stored in a selected one of said storage cells to be also stored in an unselected other of said storage cell, said coupling means including a first pair of reverse parallel coupled diodes coupled between the collectors of said first and third cross-coupled transistors and also including a second pair of reverse parallel coupled diodes coupled between the collectors of said second and fourth cross-coupled transistors.

Claim 7

The dual port memory cell as recited in claim 3 wherein said diodes are Schottky barrier diodes.

Claim 8

A dual port memory circuit for storing digital data comprising: (a) a plurality of memory cells, each of said memory cells including switching transistor means for storing a binary logic state, (b) first write-sense means coupled to said plurality of memory cells for writing digital data into said sensing digital data from each of said plurality of memory cells, (c) second write-sense means coupled to said plurality of memory cells for writing digital data into and sensing digital data from each of said plurality of memory cells, and (d) said first and second write-sense means being simultaneously operative for writing signal data into and sensing digital data from said plurality of memory cells.

Claim 9

A dual port memory circuit for storing digital data comprising: (a) a plurality of memory cells, each of said memory cells including switching transistor means for storing a binary logic state, (b) first write-sense means coupled to said plurality of memory cells for writing digital data into said sensing digital data from each of said plurality of memory cells, (c) second write-sense means coupled to said plurality of memory cells for writing digital data into and sensing digital data from each of said plurality of memory cells, and (d) said first and second write-sense means being simultaneously operative for writing signal data into and sensing digital data from said plurality of memory cells.

Claim 10

A dual port memory circuit for storing digital data as recited in claim 5 wherein: (a) a first of said plurality of memory cells is written or sensed by said first write-sense means at the same time that a second of said plurality of memory cells is written or sensed by said second write-sense means.

Claim 11

A dual port memory circuit for storing digital data as recited in claim 5 further comprising: (a) first selection means coupled to said plurality of memory cells for selecting a first of said plurality of memory cells to be written or sensed by said first write-sense means, (b) second selection means coupled to said plurality of memory cells for selecting a second of said plurality of memory cells to be written or sensed by said second write-sense means.

Claim 12

A dual port memory circuit for storing digital data comprising: (a) a plurality of memory cells, each of said plurality of memory cells including a first and second storage cell and including coupling means for coupling said first storage cell to said second storage cell and for providing a transfer of digital data between said first and second storage cells, (b) first write-sense means coupled to said plurality of memory cells for writing digital data into and sensing digital data from any one of said plurality of memory cells, (c) second write-sense means coupled to said plurality of memory cells for writing digital data into and sensing digital data from any one of said plurality of memory cells, and (d) first and second write-sense means being simultaneously operative for writing digital data into and sensing digital data from said plurality of memory cells.

Claim 13

A dual port memory circuit for storing digital data comprising: (a) a plurality of memory cells, each of said plurality of memory cells including a first and second storage cell and including coupling means for coupling said first storage cell to said second storage cell and for providing a transfer of digital data between said first and second storage cells, (b) first write-sense means coupled to said plurality of memory cells for writing digital data into and sensing digital data from any one of said plurality of memory cells, (c) second write-sense means coupled to said plurality of memory cells for writing digital data into and sensing digital data from any one of said plurality of memory cells, and (d) first and second write-sense means being simultaneously operative for writing digital data into and sensing digital data from said plurality of memory cells.

Claim 14

A dual port memory circuit as recited in claim 8 further comprising: (a) first selection means coupled to each first storage cell of each of said plurality of memory cells for selecting one of said first storage cells to be written or sensed by said first write-sense means, and (b) second selection means coupled to each second storage cell of each of said plurality of memory cells for selecting one of said second storage cells to be written or sensed by said second write-sense means.

Claim 15

A dual port memory circuit as recited in claim 9 wherein: (a) said coupling means is responsive to said first and second selection means for coupling said first storage cell to said second storage cell and for causing digital data stored in a selected one of said storage cells to be also stored in an unselected other of said storage cells.

Claim 16

A dual port memory cell comprising: a first storage cell, including first selection means for selecting first storage cell and including first coupling means responsive to said first selection means for coupling said first storage cell to read-write circuitry when said first storage cell is selected; a second storage cell, including second selection means for selecting said second storage cell and including second coupling means responsive to said second selection means for coupling said second storage cell to read-write circuitry when said second storage cell is selected; third coupling means responsive to said first and second selection means for coupling said first storage cell to said second storage cell and for causing a state stored in a selected one of said storage cells to be also stored in an unselected other of said storage cells.

Claim 17

A dual port memory cell comprising: a first storage cell, including first selection means for selecting first storage cell and including first coupling means responsive to said first selection means for coupling said first storage cell to read-write circuitry when said first storage cell is selected; a second storage cell, including second selection means for selecting said second storage cell and including second coupling means responsive to said second selection means for coupling said second storage cell to read-write circuitry when said second storage cell is selected; third coupling means responsive to said first and second selection means for coupling said first storage cell to said second storage cell and for causing a state stored in a selected one of said storage cells to be also stored in an unselected other of said storage cells.

Claim 18

The dual port memory cell as recited in claim 11 wherein said first storage cell comprises first and second cross coupled transistors, and said second storage cell comprises third and fourth cross coupled transistors.

Claim 19

The dual port memory cell as recited in claim 12 wherein each of said storage cells include a Schottky diode and a resistor coupled in parallel between the collector of each of said cross-coupled transistors and its corresponding selection means.

Claim 20

The dual port memory cell as recited in claim 12 wherein each of said storage cells include first and second output transistors each having a base coupled, respectively, to a base of one of said cross-coupled transistors and each having its collector coupled, respectively, to the collector of one of said cross-coupled transistors, and each having its emitter coupled, respectively, to a separate bit-sense conductor.

Claim 21

The dual port memory cell as recited in claim 14 wherein each of said storage cells comprises a Schottky diode and a resistor coupled in parallel between the collector of each of said cross coupled transistors and corresponding selection means.