Abstract A base junction transistor inverter circuit will be driven into the saturation region if the drive current is large enough. In such circumstances, the collector voltage can go below the base voltage and approaches the emitter voltage. A circuit is provided to keep the transistor out of saturation and is comprised of a p-channel field effect transistor (JFET) connected between the base and collector of the junction transistor. The JFET is connected such that when the drive current increases and the junction transistor approaches saturation, the drive current is diverted through the JFET and into the substrate. The same clamp can be implemented by using a pnp junction transistor in combination with an n-channel JFET.
A base junction transistor clamp comprising: a first base-junction transistor to be clamped fabricated into a semiconductor substrate and having its emitter coupled to said substrate; a second-base juncton transistor having its collector connected to the base of said first base-junction transistor, its emitter connected to said substrate, and a base; and a field-effect transistor having its source connected to the collector of said first base-junction transistor, its drain connected to said base of said second base-junction transistor and its gate connected to a source of reference potential, thereby causing the potential at the collector of said first base-junction transistor to be clamped at a level established by said reference potential.
Claim 2
Dependent Claim
111 words
A base junction transistor clamp comprising: a first base-junction transistor to be clamped fabricated into a semiconductor substrate and having its emitter coupled to said substrate; a second-base juncton transistor having its collector connected to the base of said first base-junction transistor, its emitter connected to said substrate, and a base; and a field-effect transistor having its source connected to the collector of said first base-junction transistor, its drain connected to said base of said second base-junction transistor and its gate connected to a source of reference potential, thereby causing the potential at the collector of said first base-junction transistor to be clamped at a level established by said reference potential.