US4117353A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Controlled current sink
Assignee: General Electric Co
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Filing: 1976-12-23
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Granted: 1978-09-26
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Expires: 1996-12-23
Abstract
Abstract A solid state cathode driver circuit for controllably sinking a current substantially independent of applied voltage includes a main current carrying transistor and first and second field effect transistors connected to a controlled electrode of the current carrying transistor for setting the potential on the control electrode substantially independent of the applied voltages to the controlled terminals. The magnitude of the sunk current is essentially determined by the geometry of the device utilized and is, therefore, essentially constant. Selective activation of the current sink is provided by grounding the control electrode to turn off the device.
Inventors
- 👤 Walter J. Butler
- 👤 Charles W. Eichelberger
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 23:35
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; G; G04; G04G; G04G9/00; G04G9/0023; G04G9/0029; G04G9/0047; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/24; G05F3/242; G05F3/247; H10D84/8311
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
166 words
A controlled current sink comprising: a main current carrying depletion mode field effect transistor having first and second current carrying electrodes and a control electrode for regulating the amount of current flowing through said current carrying electrodes of said main current carrying transistor; a first enhancement mode field effect transistor connected between said control electrode and said first current carrying electrode of said main current carrying transistor; a second depletion mode field effect transistor connected between said control electrode and said second current carrying electrode of said main current carrying transistor; said first enhancement mode field effect transistor and said second depletion mode field effect transistor each including a gate terminal, said gate terminals connected directly together and connected directly to said control electrode of said main current carrying transistor; and field effect transistor means for selectively grounding said control electrode of said main current carrying transistor, said field effect transistor means including a drain electrode connected directly to said gate terminals and said control electrode.
Claim 2
Dependent Claim
166 words
A controlled current sink comprising: a main current carrying depletion mode field effect transistor having first and second current carrying electrodes and a control electrode for regulating the amount of current flowing through said current carrying electrodes of said main current carrying transistor; a first enhancement mode field effect transistor connected between said control electrode and said first current carrying electrode of said main current carrying transistor; a second depletion mode field effect transistor connected between said control electrode and said second current carrying electrode of said main current carrying transistor; said first enhancement mode field effect transistor and said second depletion mode field effect transistor each including a gate terminal, said gate terminals connected directly together and connected directly to said control electrode of said main current carrying transistor; and field effect transistor means for selectively grounding said control electrode of said main current carrying transistor, said field effect transistor means including a drain electrode connected directly to said gate terminals and said control electrode.
Claim 3
Dependent Claim
49 words
The controlled current sink of claim 1 wherein said main current carrying transistor comprises a field effect transistor, said first and second current carrying electrodes comprising the source and drain electrodes, respectively of said field effect transistor and said control electrode comprising the gate of said field effect transistor.
Claim 4
Dependent Claim
21 words
The controlled current sink of claim 2 wherein said main current carrying field effect transistor comprises a metal-oxide-semiconductor field effect transistor.
Claim 5
Dependent Claim
35 words
The controlled current sink of claim 3 wherein said first enhancement mode field effect transistor comprises a metal-oxide-semiconductor field effect transistor and said second depletion mode field effect transistor comprises a metal-oxide-semiconductor field effect transistor.
Claim 6
Dependent Claim
62 words
The controlled current sink of claim 4 wherein said field effect transistor means for selectively grounding said control electrode comprises a metal-oxide-semiconductor field effect transistor having drain, source and gate electrode, said drain electrode connected to said control electrode of said main current carrying transistor, said source electrode connected to ground, and said gate electrode connected to a source of control signals.
Claim 7
Dependent Claim
35 words
The controlled current sink of claim 1 wherein said first enhancement mode field effect transistor comprises a metal-oxide-semiconductor field effect transistor and said second depletion mode field effect transistor comprises a metal-oxide-semiconductor field effect transistor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-09-25 | 1982-03-27 | 1982-09-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-09-25 | 1986-03-27 | 1986-09-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-09-25 | 1990-03-27 | 1990-09-26 | $7700.00 | Window Closed / Lapsed |