Patent US4115228A successfully refreshed from Google Patents.
US4115228A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making secondary-electron emitters
Assignee: Massachusetts Institute of Technology
•
Filing: 1977-05-31
•
Granted: 1978-09-19
•
Expires: 1997-05-31
Abstract
Abstract Thick, finely-grained films of cermets are fabricated using conventional techniques of sputtering the ceramic and the metal onto a substrate. The cermet is then subjected to differential sputtering in which the metal is sputtered away faster than the ceramic to leave a ceramic-rich surface layer having excellent secondary-electron-emission properties for low-energy incident electrons. Typical of such cermets are MgO/Au, MgO/Pt and MgO/Ag. The presence of metallic particles in the bulk of the films and the small size of the ceramic particles greatly reduce surface charging while allowing the emitter film to be made thick enough to have a long operating life under adverse device conditions.
Inventors
- 👤 Victor E. Henrich
- 👤 John C. C. Fan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:37
CPC Classifications
H; H04; H04M; H04M3/00; H04M3/42; H04M3/50; H04M3/527; H01; H01J; H01J1/00; H01J1/02; H01J1/32; H01J9/00; H01J9/02; H01J9/12; H01J9/125; H01J2201/00; H01J2201/32; H04M3/42221
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
115 words
A method of making a secondary-electron emitter comprising: combining a secondary-electron emitter material and a metallic material to provide a fine-grained cermet layer of said materials, removing said electrically conductive material from the surface of said layer to change the ratio of said materials on said surface, wherein said steps of combining said emitter material and said conductive material comprises sputtering said materials to transfer them to form a film on a substrate, and said step of removing said electrically conductive material comprises sputter etching said film to remove both the emitter and conductive material but at different rates to leave a surface layer richer in said emitter material than existed prior to sputter etching.
Claim 2
Independent Claim
115 words
A method of making a secondary-electron emitter comprising: combining a secondary-electron emitter material and a metallic material to provide a fine-grained cermet layer of said materials, removing said electrically conductive material from the surface of said layer to change the ratio of said materials on said surface, wherein said steps of combining said emitter material and said conductive material comprises sputtering said materials to transfer them to form a film on a substrate, and said step of removing said electrically conductive material comprises sputter etching said film to remove both the emitter and conductive material but at different rates to leave a surface layer richer in said emitter material than existed prior to sputter etching.
Claim 3
Independent Claim
93 words
A method of making a secondary-electron emitter from a fine-grained cermet layer of a mixture of a secondary-electron emitter material and a metallic material comprising: removing said electrically conductive material from the surface of said layer to change the ratio of said materials on said surface, wherein said step of removing said electrically conductive material comprises bombarding said layer with ions to remove by sputter etching both the secondary-electron emitter and conductive material but at different rates to leave a surface layer richer in said emitter material than existed prior to sputter etching.
Claim 4
Independent Claim
93 words
A method of making a secondary-electron emitter from a fine-grained cermet layer of a mixture of a secondary-electron emitter material and a metallic material comprising: removing said electrically conductive material from the surface of said layer to change the ratio of said materials on said surface, wherein said step of removing said electrically conductive material comprises bombarding said layer with ions to remove by sputter etching both the secondary-electron emitter and conductive material but at different rates to leave a surface layer richer in said emitter material than existed prior to sputter etching.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-09-18 | 1982-03-20 | 1982-09-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-09-18 | 1986-03-20 | 1986-09-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-09-18 | 1990-03-20 | 1990-09-19 | $7700.00 | Window Closed / Lapsed |