US4113548A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for the production of silicon layers
Assignee: Individual
•
Filing: 1977-05-11
•
Granted: 1978-09-12
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Expires: 1997-05-11
Abstract
Abstract A process for the production of a semi-conducting silicon layer on a foreign substrate by means of melt epitaxy comprises the steps of dissolving silicon in an aluminum-zinc melt and drawing a strip-like oxidized aluminum film or a strip-like oxidized aluminum film provided with a mono-atomic silicon or metal coating across the surface of the melt solution.
Inventors
- 👤 Hermann Sigmund
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 05:52
CPC Classifications
C; C30; C30B; C30B19/00; C30B15/00; C30B15/007; C30B15/06; Y; Y10; Y10S; Y10S117/00; Y10S117/914
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
42 words
A process for the production of a semi-conducting silicon layer on a foreign substrate by means of melt epitaxy, wherein silicon is dissolved in an aluminum-zinc melt and a strip-like oxidized aluminum film is drawn across the surface of the melt solution.
Claim 2
Dependent Claim
42 words
A process for the production of a semi-conducting silicon layer on a foreign substrate by means of melt epitaxy, wherein silicon is dissolved in an aluminum-zinc melt and a strip-like oxidized aluminum film is drawn across the surface of the melt solution.
Claim 3
Dependent Claim
37 words
A process according to claim 1, wherein the aluminum-zinc melt has a composition within the range of 90 mol percent aluminum and 10 mol percent zinc up to 20 mol percent aluminum and 80 mol percent zinc.
Claim 4
Dependent Claim
19 words
A process according to claim 1, wherein the melt is recirculated in the drawing direction of the aluminum strip.
Claim 5
Dependent Claim
23 words
A process according to claim 1, wherein the melt is recirculated in a direction opposite to the drawing direction of the aluminum strip.
Claim 6
Dependent Claim
16 words
A process according to claim 1, wherein the structure of the aluminum oxide layer is amorphous.
Claim 7
Dependent Claim
34 words
A process according to claim 1, wherein the surface of the aluminum oxide layer includes a mono-layer of silicon atoms to obtain planar-like crystal growth of said silicon layer on said aluminum oxide layer.
Claim 8
Dependent Claim
38 words
A process according to claim 6, wherein said aluminum oxide layer is amorphous and the density of said silicon atoms does not exceed the surface density of the aluminum and oxygen atoms of said amorphous aluminum oxide layer.
Claim 9
Dependent Claim
34 words
A process according to claim 1, wherein the surface of the aluminum oxide layer includes a mono-layer of metal atoms to obtain planar-like crystal growth of said silicon layer on said aluminum oxide layer.
Claim 10
Dependent Claim
38 words
A process according to claim 8, wherein said aluminum oxide layer is amorphous and the density of said metal atoms does not exceed the surface density of the aluminum and oxygen atoms of said amorphous aluminum oxide layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-09-11 | 1982-03-13 | 1982-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-09-11 | 1986-03-13 | 1986-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-09-11 | 1990-03-13 | 1990-09-12 | $7700.00 | Window Closed / Lapsed |