Method for depositing a semiconductor material on the substrate from the liquid phase
Abstract
Abstract A layer of a semiconductor material is epitaxially deposited on a substrate by liquid phase epitaxy wherein a heated solution of the semiconductor material dissolved in a molten solvent is brought into contact with a surface of the substrate and the solution and substrate are cooled to deposit the semiconductor material on the substrate. During the cooling of the solution and the substrate heat is radiated from the substrate faster than from the solution so that the substrate is at a temperature slightly below the temperature of the solution. The heat radiation differential can be achieved by carrying out the method in a container having a heat radiation window therethrough over which the substrate is mounted.
Inventors
- 👤 H Lockwood
Bibliographic Details
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