US3650822A
Expired / Lapsed
US
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Method of producing epitactic semiconductor layers on foreign substrates
Assignee: Siemens AG
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Filing: 1969-09-25
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Granted: 1972-03-21
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Expires: 1989-09-25
Abstract
Abstract A method of producing thin, monocrystalline layers of semiconductor material, upon a monocrystalline, preferably wafershaped, substrate body of another chemical composition, but having the same or a similar lattice structure, by an epitactic growth process. The substrate body is immersed into a melt comprising the appropriate semiconductor material. A temperature balance between the substrate body and the melt, is established. Thereafter the semiconductor material epitactically grown on the surface of the substrate body, by slowly pulling the substrate body out from the melt.
Inventors
- 👤 Josef Grabmaier
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:00
CPC Classifications
C; C30; C30B; C30B15/00; C30B15/007; C30B15/32; C30B19/00; Y; Y10; Y10S; Y10S148/00; Y10S148/065; Y10S148/072; Y10S148/107; Y10S148/15; Y10S438/00; Y10S438/967
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
19 words
The method of claim 1, wherein the substrate is a Mg-Al spinel of the composition: MgO:Al2O3 1:1 to 1:3.5.
Claim 2
Dependent Claim
19 words
The method of claim 1, wherein the substrate is sapphire or corrundum, and is oriented in the (001) plane.
Claim 3
Dependent Claim
12 words
The method of claim 1, wherein the melt is a silicon melt.
Claim 4
Dependent Claim
12 words
The method of claim 1, wherein the melt is a germanium melt.
Claim 5
Dependent Claim
12 words
The method of claim 1, wherein the melt is an AIIIBV compound.
Claim 6
Dependent Claim
11 words
The method of claim 6, wherein the melt is gallium arsenide.
Claim 7
Dependent Claim
14 words
The method of claim 1, wherein dopant substances are added to the semiconductor melt.
Claim 8
Dependent Claim
50 words
The method of claim 1, wherein several semiconductor layers of variable conductivity and comprised of the same or of different semiconductor material, are sequentially applied, upon the substrate body, and the substrate body, which was last coated with the layer serves as the substrate body for the next epitactic precipitation.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-03-21 | 1975-09-20 | 1976-03-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-03-21 | 1979-09-20 | 1980-03-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-03-21 | 1983-09-20 | 1984-03-21 | $7700.00 | Window Closed / Lapsed |