Patent US4104697A successfully refreshed from Google Patents.
US4104697A
Expired / Lapsed
US
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Discrete, fixed-value capacitor
Assignee: Texas Instruments Inc
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Filing: 1977-01-14
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Granted: 1978-08-01
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Expires: 1997-01-14
Abstract
Abstract An axial-lead fixed-value capacitor comprising a metal-nitride-oxide-silicon chip in a standard diode package has been fabricated, having capacitance values in the 10 to 1000 pico-farad range. The device features a beveled-edge configuration which contributes to a low leakage current and also facilitates the sealing of the semiconductor chip in a double plug axial-lead package. The double layer dielectric medium comprises a thermally grown silicon oxide film typically 450 angstroms thick, for example, and a plasma deposited layer of silicon nitride typically 350 angstroms thick, for example.
Inventors
- 👤 Don L. Kendall
- 👤 Byron T. Ahlburn
- 👤 Klaus C. Wiemer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:09
CPC Classifications
H; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
94 words
A capacitor device comprising a double-plug, coaxial-lead, glass-sealed package having a semiconductor capacitor chip sealed therein said chip comprising a monocrystalline silicon body doped to a concentration in excess of 10 19 atoms per cm 3 and having first and second substantially parallel opposite faces, a first dielectric layer of thermally grown silicon oxide on said first face, a second dielectric layer on said oxide comprising silicon nitride, a first metal film comprising Ti:W on said nitride layer, a gold-comprising film on said Ti:W, and a metal contact comprising palladium on said second face.
Claim 2
Dependent Claim
94 words
A capacitor device comprising a double-plug, coaxial-lead, glass-sealed package having a semiconductor capacitor chip sealed therein said chip comprising a monocrystalline silicon body doped to a concentration in excess of 10 19 atoms per cm 3 and having first and second substantially parallel opposite faces, a first dielectric layer of thermally grown silicon oxide on said first face, a second dielectric layer on said oxide comprising silicon nitride, a first metal film comprising Ti:W on said nitride layer, a gold-comprising film on said Ti:W, and a metal contact comprising palladium on said second face.
Claim 3
Dependent Claim
16 words
A device as in claim 1, wherein said silicon oxide film is about 300-600 angstroms thick.
Claim 4
Dependent Claim
15 words
A device as in claim 2, wherein said silicon nitride is about 200-600 angstroms thick.
Claim 5
Dependent Claim
11 words
A device as in claim 1, wherein said dopant is arsenic.
Claim 6
Dependent Claim
88 words
A semiconductor capacitor chip comprising a monocrystalline silicon body doped to a concentration in excess of 10 19 atoms per cm 3 and having first and second substantially parallel opposite faces, a first dielectric layer of thermally grown silicon oxide about 300-600 angstroms thick on said first face, a second dielectric layer on said oxide comprising silicon nitride about 200-600 angstroms thick, a first metal film comprising Ti:W on said nitride layer, a gold-comprising film on said Ti:W, and a metal contact comprising palladium on said second face.
Claim 7
Dependent Claim
88 words
A semiconductor capacitor chip comprising a monocrystalline silicon body doped to a concentration in excess of 10 19 atoms per cm 3 and having first and second substantially parallel opposite faces, a first dielectric layer of thermally grown silicon oxide about 300-600 angstroms thick on said first face, a second dielectric layer on said oxide comprising silicon nitride about 200-600 angstroms thick, a first metal film comprising Ti:W on said nitride layer, a gold-comprising film on said Ti:W, and a metal contact comprising palladium on said second face.
References Cited (Backward Citations)
US3321683A
Cited
US4015175A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-07-31 | 1982-01-30 | 1982-08-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-07-31 | 1986-01-30 | 1986-08-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-07-31 | 1990-01-30 | 1990-08-01 | $7700.00 | Window Closed / Lapsed |