Patent US4104673A successfully refreshed from Google Patents.
US4104673A
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Field effect pentode transistor
Assignee: Micron Technology Inc
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Filing: 1977-02-07
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Granted: 1978-08-01
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Expires: 1997-02-07
Abstract
Abstract A field effect pentode transistor, which provides a gain over an extremely broad band of frequencies is disclosed. The transistor has source and drain electrodes defined by ohmic contacts, a first gate input control electrode defined by a Schottky-barrier, a screen electrode, and a second control gate Schottky-barrier electrode. The screen electrode is an ohmic contact located between the first and second gate control electrodes; and the second control electrode is located between the screen electrode and the drain electrode.
Inventors
- 👤 Lawrence E. Dickens
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 14:23
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/80; H10D30/87; H10D30/873
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
129 words
A field effect pentode transistor, comprising a first supporting layer of semi-conductive material, a second active semi-conductor layer formed on one face of the first layer, a source electrode and a drain electrode spaced from each other one portion of each said electrode being formed on the first layer and a second portion of each said electrode overlying and being in ohmic contact with the second layer, a screen electrodes spaced from and positioned between the source and drain electrodes, overlying and in ohmic contact with said second layer, a first control gate electrode formed on the second layer spaced from and positioned between the source and screen electrodes, and a second control gate formed on the second layer spaced from and positioned between the drain and screen electrodes.
Claim 2
Dependent Claim
129 words
A field effect pentode transistor, comprising a first supporting layer of semi-conductive material, a second active semi-conductor layer formed on one face of the first layer, a source electrode and a drain electrode spaced from each other one portion of each said electrode being formed on the first layer and a second portion of each said electrode overlying and being in ohmic contact with the second layer, a screen electrodes spaced from and positioned between the source and drain electrodes, overlying and in ohmic contact with said second layer, a first control gate electrode formed on the second layer spaced from and positioned between the source and screen electrodes, and a second control gate formed on the second layer spaced from and positioned between the drain and screen electrodes.
Claim 3
Dependent Claim
26 words
A field effect pentode transistor according to claim 1 wherein each of the first and second gate electrode forms a Schottky barrier with the second layer.
Claim 4
Dependent Claim
17 words
A field effect pentode transistor according to claim 1 where the second layer is an epitaxial layer.
Claim 5
Dependent Claim
27 words
A field effect pentode transistor according to claim 1 wherein the width of the second control gate is greater than the width of the first control gate.
Claim 6
Dependent Claim
32 words
A field effect pentode transistor according to claim 4 wherein the width of the second control gate is from two to seven times greater than the width of the first control gate.
Claim 7
Dependent Claim
135 words
A field effect pentode transistor, comprising a first supporting layer of semi-conductive material, a second active semi-conductor layer formed on one face of the first layer, an insulating layer formed on said one face of the first layer exterior of the second layer, a source electrode and a drain electrode spaced from each other, each said electrode having one portion formed on the insulating layer and another portion in ohmic contact with a second layer, a screen electrode spaced from and positioned between the source and drain electrodes in ohmic contact with the second layer, a first control gate electrode formed on the second layer spaced from and positioned between the source and screen electrodes, and a second control gate formed on the second layer spaced from and positioned between the drain and screen electrodes.
Claim 8
Dependent Claim
135 words
A field effect pentode transistor, comprising a first supporting layer of semi-conductive material, a second active semi-conductor layer formed on one face of the first layer, an insulating layer formed on said one face of the first layer exterior of the second layer, a source electrode and a drain electrode spaced from each other, each said electrode having one portion formed on the insulating layer and another portion in ohmic contact with a second layer, a screen electrode spaced from and positioned between the source and drain electrodes in ohmic contact with the second layer, a first control gate electrode formed on the second layer spaced from and positioned between the source and screen electrodes, and a second control gate formed on the second layer spaced from and positioned between the drain and screen electrodes.
Claim 9
Dependent Claim
17 words
A field effect pentode transistor according to claim 6 wherein the third layer is SiO 2 .
References Cited (Backward Citations)
US3634702A
Cited
US3699408A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-07-31 | 1982-01-30 | 1982-08-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-07-31 | 1986-01-30 | 1986-08-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-07-31 | 1990-01-30 | 1990-08-01 | $7700.00 | Window Closed / Lapsed |