Gate fabrication method for mnos memory devices

Claim 1

A method of growing an insulating layer from a thin oxide layer formed on a silicon substrate to improve the memory window and reduce the rate of memory decay of a device in which said layer and substrate is utilized, comprising the steps of: heating the substrate on which the layer is formed in a furnace chamber of approximately 600° to 900° centigrade through which a substantially pure inert gas is flowing at a selected rate; introducing anhydrous HCL into the furnace at a selected rate to subject the heated oxide layer to a predetermined percentage mixture of the inert gas and the anhydrous HCL; eliminating the anhydrous HCL from the mixture upon the expiration of a selected period of time; and permitting the substrate to cool.

Claim 2

A method of growing an insulating layer from a thin oxide layer formed on a silicon substrate to improve the memory window and reduce the rate of memory decay of a device in which said layer and substrate is utilized, comprising the steps of: heating the substrate on which the layer is formed in a furnace chamber of approximately 600° to 900° centigrade through which a substantially pure inert gas is flowing at a selected rate; introducing anhydrous HCL into the furnace at a selected rate to subject the heated oxide layer to a predetermined percentage mixture of the inert gas and the anhydrous HCL; eliminating the anhydrous HCL from the mixture upon the expiration of a selected period of time; and permitting the substrate to cool.

Claim 12

A method of processing a thin oxide portion of an MNOS memory transistor to provide a device having a DC memory window of approximately 12 volts and a memory decay rate of approximately 0.35 to 0.1 volts per decade, comprising the steps of: subjecting the MNOS substrate having previously formed drain and source regions and an overlying thick and thin oxide portion to a furnace temperature of approximately between 600° to 900° centigrade in an atmosphere of a flowing inert gas; changing the inert gas atmosphere to a flowing atmosphere of approximately 1% anhydrous HCL and 99% inert gas after a first predetermined time interval; changing the anhydrous HCL and inert gas atmosphere to an inert gas atmosphere after a second predetermined time interval; and cooling the substrate after a third predetermined time interval.

Claim 13

A method of processing a thin oxide portion of an MNOS memory transistor to provide a device having a DC memory window of approximately 12 volts and a memory decay rate of approximately 0.35 to 0.1 volts per decade, comprising the steps of: subjecting the MNOS substrate having previously formed drain and source regions and an overlying thick and thin oxide portion to a furnace temperature of approximately between 600° to 900° centigrade in an atmosphere of a flowing inert gas; changing the inert gas atmosphere to a flowing atmosphere of approximately 1% anhydrous HCL and 99% inert gas after a first predetermined time interval; changing the anhydrous HCL and inert gas atmosphere to an inert gas atmosphere after a second predetermined time interval; and cooling the substrate after a third predetermined time interval.

Claim 22

A method of processing a thin oxide layer formed on a silicon substrate, comprising the steps of: subjecting the substrate on which the layer is formed to a furnace chamber having a temperature between approximately 600° and 900° centigrade through which an inert gas is flowing for approximately 5 minutes for a rate of approximately 1 liter per minute for a chamber of approximately ten square inches in cross section; introducing anhydrous HCL into the heated chamber for approximately 10 minutes for a mixture of 99% inert gas and 1% HCL for an approximate rate of one liter per minute; continuing the flow of inert gas in the furnace chamber for approximately 1 minute for a flow rate of approximately 1 liter per minute; and removing the substrate from the furnace.

Claim 23

A method of processing a thin oxide layer formed on a silicon substrate, comprising the steps of: subjecting the substrate on which the layer is formed to a furnace chamber having a temperature between approximately 600° and 900° centigrade through which an inert gas is flowing for approximately 5 minutes for a rate of approximately 1 liter per minute for a chamber of approximately ten square inches in cross section; introducing anhydrous HCL into the heated chamber for approximately 10 minutes for a mixture of 99% inert gas and 1% HCL for an approximate rate of one liter per minute; continuing the flow of inert gas in the furnace chamber for approximately 1 minute for a flow rate of approximately 1 liter per minute; and removing the substrate from the furnace.