Patent US4092446A successfully refreshed from Google Patents.
US4092446A
Expired / Lapsed
US
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Process of refining impure silicon to produce purified electronic grade silicon
Assignee: Texas Instruments Inc
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Filing: 1974-07-31
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Granted: 1978-05-30
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Expires: 1994-07-31
Abstract
Abstract A balanced closed cycle silicon refinery has been developed for producing electronic silicon from industrial grade silicon. Impurities comprising approximately 1% of the industrial grade silicon are removed during the refinery process to produce the purified silicon, while only a relatively small percentage of make-up chemicals are added to the system. In the refinery, hydrogen chloride is reacted with the impure silicon in a halide reactor to provide trichlorosilane and silicon tetrachloride and hydrogen. The trichlorosilane and/or silicon tetrachloride are purified to remove the impurities, and then reacted with the hydrogen from the halide reactor in a fluidized bed reactor to produce the purified silicon and an effluent comprised of unreacted trichlorosilane, silicon tetrachloride, hydrogen, and the by-product hydrogen chloride. These materials are separated and the trichlorosilane and silicon tetrachloride and hydrogen are returned to the silicon reactor while the hydrogen chloride is returned to the halide reactor to be reacted with additional industrial grade silicon in a closed cycle process.
Inventors
- 👤 Francois A. Padovani
- 👤 Michael Brant Miller
- 👤 James A. Moore
- 👤 James H. Fowler
- 👤 Malcolm Neville June
- 👤 James D. Matthews
- 👤 T. R. Morton
- 👤 Norbert A. Stotko
- 👤 Lewis B. Palmer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 14:09
CPC Classifications
C; C01; C01B; C01B33/00; C01B33/02; Y; Y10; Y10S; Y10S423/00; Y10S423/09; Y10S423/16
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
204 words
A method of refining impure silicon to produce purified electronic grade silicon comprising the steps of: (a) charging a stream of a hydrogen halide through a bed of impure silicon particles in a first reaction zone to produce a first impurity containing effluent stream of halosilane and/or silicon halide and a second effluent stream comprised of hydrogen; (b) passing said first effluent stream from said first reaction zone to a purification zone to remove the impurities therefrom and produce a third effluent stream of purified halosilane and/or silicon halide; (c) passing said second effluent stream from said first reaction zone to a separation zone to remove the hydrogen therefrom and produce a hydrogen stream; (d) charging said third effluent stream and said stream of hydrogen through a bed of purified electronic grade silicon seed particles in a second reaction zone to deposit electronic grade silicon product on said seed particles and a fourth effluent stream comprised of hydrogen halide; (e) passing said fourth effluent stream from said second reaction zone to a separation zone to remove said hydrogen halide and passing said hydrogen halide stream to said first reaction zone; and (f) recovering said deposited electronic grade silicon product from said second reaction zone.
Claim 2
Independent Claim
204 words
A method of refining impure silicon to produce purified electronic grade silicon comprising the steps of: (a) charging a stream of a hydrogen halide through a bed of impure silicon particles in a first reaction zone to produce a first impurity containing effluent stream of halosilane and/or silicon halide and a second effluent stream comprised of hydrogen; (b) passing said first effluent stream from said first reaction zone to a purification zone to remove the impurities therefrom and produce a third effluent stream of purified halosilane and/or silicon halide; (c) passing said second effluent stream from said first reaction zone to a separation zone to remove the hydrogen therefrom and produce a hydrogen stream; (d) charging said third effluent stream and said stream of hydrogen through a bed of purified electronic grade silicon seed particles in a second reaction zone to deposit electronic grade silicon product on said seed particles and a fourth effluent stream comprised of hydrogen halide; (e) passing said fourth effluent stream from said second reaction zone to a separation zone to remove said hydrogen halide and passing said hydrogen halide stream to said first reaction zone; and (f) recovering said deposited electronic grade silicon product from said second reaction zone.
Claim 3
Dependent Claim
21 words
The method according to claim 1 wherein said bed of impure silicon particles is elevated by said stream of hydrogen halide.
Claim 4
Dependent Claim
35 words
The method according to claim 1 including the step of adding additional impure silicon particles to said bed of particles in said first reaction zone to replace the impure silicon used up in the reaction.
Claim 5
Dependent Claim
25 words
The method according to claim 1 wherein said bed of purified silicon seed particles is elevated or fluidized by said stream of hydrogen and reactants.
Claim 6
Dependent Claim
39 words
The method according to claim 1 including the step of adding additional purified silicon seed particles to said bed of particles in said second reaction zone to replace seed particles which are removed with said deposited electronic grade silicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-05-29 | 1981-11-28 | 1982-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-05-29 | 1985-11-28 | 1986-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-05-29 | 1989-11-28 | 1990-05-30 | $7700.00 | Window Closed / Lapsed |