Quasi static, virtually nonvolatile random access memory cell

Claim 1

A nonvolatile information storage cell for a storage system having a charge pump line, a bit line, a bit line, and a word line, said cell comprising: a. a flip-flop including a first and a second metal oxide semiconductor field effect transistors having a respective first load line and a respective second load line; b. a first metal-nitride-oxide-semiconductor nonvolatile charge injection device having a field plate and a diffusion connection, the said diffusion connection connected to the said first load line; c. a second metal-nitride-oxide-semiconductor nonvolatile charge injection device having a field plate and a diffusion connection, the said diffusion connection connected to the said second load line; d. means for connecting the said field plate of the said first nonvolatile charge injection device and the said field plate of the said second nonvolatile charge injection device to the said charge pump line; e. a first access metal oxide semiconductor field effect transistor cooperating with the said word line, the said bit line, and the said first load line; f. a second access metal oxide semiconductor field effect transistor, cooperating with the said word line, the said bit line, and the said second load line; and g. means including the said first and second access transistors to provide an input/output to the said storage cell.