Patent US4090915A successfully refreshed from Google Patents.
US4090915A
Expired / Lapsed
US
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Forming patterned polycrystalline silicon
Assignee: RCA Corp
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Filing: 1977-08-12
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Granted: 1978-05-23
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Expires: 1997-08-12
Abstract
Abstract A method of forming patterned polycrystalline silicon having a rounded profile on a substrate comprises providing a defined source of one type conductivity modifiers adjacent the substrate where the silicon is to be formed, depositing a film of polycrystalline silicon over the defined source, diffusing the conductivity modifiers from the defined source into regions of the film adjacent thereto, and then contacting the entire surface of the film with a solvent in which the film is soluble but in which the regions doped with the one type conductivity modifiers are substantially insoluble, thereby removing regions of the film that are substantially void of the one type conductivity modifiers.
Inventors
- 👤 Kenneth Robert Keller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 17:48
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/30; H10P32/302; H10P50/00; H10P50/60; H10P50/66; H10P50/663; H10P50/667
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
138 words
A method of forming patterned polycrystalline silicon having a rounded profile on a substrate comprising the steps of providing a defined source of one type conductivity modifiers adjacent said substrate where said patterned polycrystalline silicon is to be formed, depositing a film of polycrystalline silicon, substantially void of said one type conductivity modifiers, over said defined source, diffusing said one type conductivity modifiers from said defined source into regions of said film adjacent thereto, and contacting the entire surface of said film with a solvent in which said film is soluble but in which said regions doped with said one type conductivity modifiers are substantially insoluble, for a time sufficient to remove the regions of said film that are substantially void of said one type conductivity modifiers, whereby said patterned polycrystalline silicon having a rounded profile is formed.
Claim 2
Independent Claim
138 words
A method of forming patterned polycrystalline silicon having a rounded profile on a substrate comprising the steps of providing a defined source of one type conductivity modifiers adjacent said substrate where said patterned polycrystalline silicon is to be formed, depositing a film of polycrystalline silicon, substantially void of said one type conductivity modifiers, over said defined source, diffusing said one type conductivity modifiers from said defined source into regions of said film adjacent thereto, and contacting the entire surface of said film with a solvent in which said film is soluble but in which said regions doped with said one type conductivity modifiers are substantially insoluble, for a time sufficient to remove the regions of said film that are substantially void of said one type conductivity modifiers, whereby said patterned polycrystalline silicon having a rounded profile is formed.
Claim 3
Dependent Claim
51 words
A method as recited in claim 1 wherein said providing step is performed by forming a layer of material containing said one type conductivity modifiers on said substrate, and defining said layer selectively so that only a portion of said layer remains where said patterned polycrystalline silicon is to be formed.
Claim 4
Dependent Claim
30 words
A method as recited in claim 2 wherein said depositing step is performed by depositing said film over said remaining portion of said layer and exposed sections of said substrate.
Claim 5
Dependent Claim
48 words
A method as recited in claim 3 wherein said layer of material is doped silicon dioxide, and wherein said defining step is performed by photolithographically removing portions of said layer so that only the portion of said layer remains where said patterned polycrystalline silicon is to be formed.
Claim 6
Dependent Claim
55 words
A method as recited in claim 4 wherein said diffusing step is performed by heating said substrate to a temperature at which said one type conductivity modifiers will diffuse from said silicon dioxide into said regions of said film and maintaining said temperature until a desired redistribution of said one type conductivity modifiers is achieved.
Claim 7
Dependent Claim
37 words
A method as recited in claim 2 wherein said one type conductivity is P type, and wherein said solvent is selected from the group consisting of aqueous hydrazine, aqueous potassium hydroxide, aqueous ammonium hydroxide, and potassium hydroxide-propanol.
Claim 8
Dependent Claim
17 words
A method as recited in claim 6 wherein said film of polycrystalline silicon is substantially intrinsic silicon.
Claim 9
Dependent Claim
18 words
A method as recited in claim 6 wherein said film of polycrystalline silicon contains N type conductivity modifiers.
Claim 10
Dependent Claim
32 words
A method as recited in claim 2 wherein said substrate comprises a silicon wafer having a layer of silicon dioxide thereon, said silicon dioxide layer having a layer of silicon nitride thereover.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-05-22 | 1981-11-21 | 1982-05-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-05-22 | 1985-11-21 | 1986-05-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-05-22 | 1989-11-21 | 1990-05-23 | $7700.00 | Window Closed / Lapsed |