US4088514A
Expired / Lapsed
US
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Method for epitaxial growth of thin semiconductor layer from solution
Assignee: Panasonic Holdings Corp
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Filing: 1976-04-09
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Granted: 1978-05-09
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Expires: 1996-04-09
Abstract
Abstract Thin epitaxial layers of Group III-V semiconductor materials are grown from solution with improved thickness reproducibility and surface smoothness by a method including the steps of preparing an ideally saturated solution of the semiconductor material in a metal melt preferably by keeping an undersaturated solution in contact with the crystalline semiconductor material at a predetermined temperature, supercooling the saturated solution and then bringing the supercooled solution into contact with a substrate. A growth boat assembly for this method has at least one set of two boats slidably stacked one upon another, wherein the upper boat has a solution reservoir and the lower boat has two depressions respectively for receiving therein the substrate and the crystalline semiconductor material as the source material at the saturation step, arranged such that a solution contained in the reservoir can selectively be contacted with either of the source material and the substrate and isolated from both.
Inventors
- 👤 Tohru Hara
- 👤 Minoru Mihara
- 👤 Nobuyuki Toyoda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 16:52
CPC Classifications
C; C30; C30B; C30B19/00; C30B19/06; C30B19/065; C30B19/08; C30B19/10; H; H10; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P14/3446
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
239 words
A method for liquid-phase epitaxial growth of a thin layer of a Group III-V semiconductor material on a substrate from solution, comprising the steps of: (a) preparing an undersaturated solution of a Group III-V semiconductor material in a metal melt at a predetermined first temperature, the concentration of said semiconductor material in said undersaturated solution being about 5% to about 10% below the solubility of said semiconductor material in said melt at said first temperature; (b) contacting said undersaturated solution with a separate source of said semiconductor material at said first temperature to render said undersaturated solution an ideally saturated solution which is free from any precipitate; (c) lowering the temperature of said ideally saturated solution at a constant rate to a predetermined second temperature to give a supercooled solution, the difference between said first temperature and said second temperature being within the range between 0.5° C and 5° C, said ideally saturated solution being kept isolated from any source of said semiconductor material at this step; (d) contacting said supercooled solution with a substrate which has been brought to said second temperature; (e) lowering the temperature of said supercooled solution and said substrate at a constant rate until epitaxial growth on said substrate reaches a desired thickness; and (f) separating said supercooled solution from said substrate to terminate the epitaxial growth and lowering the temperature of said substrate at a rate greater than the rate at step (e).
Claim 2
Independent Claim
239 words
A method for liquid-phase epitaxial growth of a thin layer of a Group III-V semiconductor material on a substrate from solution, comprising the steps of: (a) preparing an undersaturated solution of a Group III-V semiconductor material in a metal melt at a predetermined first temperature, the concentration of said semiconductor material in said undersaturated solution being about 5% to about 10% below the solubility of said semiconductor material in said melt at said first temperature; (b) contacting said undersaturated solution with a separate source of said semiconductor material at said first temperature to render said undersaturated solution an ideally saturated solution which is free from any precipitate; (c) lowering the temperature of said ideally saturated solution at a constant rate to a predetermined second temperature to give a supercooled solution, the difference between said first temperature and said second temperature being within the range between 0.5° C and 5° C, said ideally saturated solution being kept isolated from any source of said semiconductor material at this step; (d) contacting said supercooled solution with a substrate which has been brought to said second temperature; (e) lowering the temperature of said supercooled solution and said substrate at a constant rate until epitaxial growth on said substrate reaches a desired thickness; and (f) separating said supercooled solution from said substrate to terminate the epitaxial growth and lowering the temperature of said substrate at a rate greater than the rate at step (e).
Claim 3
Dependent Claim
20 words
A method as claimed in claim 1, wherein said separate source of said semiconductor material is in the crystalline form.
Claim 4
Dependent Claim
53 words
A method as claimed in claim 1, further comprising the steps of raising the temperature of said supercooled solution to said first temperature subsequently to the step (f) and thereafter repeating the steps (b) and (c) thereby to repeatedly use the same solution for carrying out the step (c) with a separate substrate.
Claim 5
Dependent Claim
19 words
A method as claimed in claim 1, wherein said semiconductor material is GaAs, said metal melt being Ga melt.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-05-08 | 1981-11-07 | 1982-05-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-05-08 | 1985-11-07 | 1986-05-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-05-08 | 1989-11-07 | 1990-05-09 | $7700.00 | Window Closed / Lapsed |