US3853643A
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Epitaxial growth of group iii-v semiconductors from solution
Assignee: AT&T Inc
•
Filing: 1973-06-18
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Granted: 1974-12-10
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Expires: 1993-06-18
Abstract
Abstract Epitaxial layers of Group III-V compound semiconductors are grown from solution, simultaneously on several substrate wafers. The solution is produced in bulk at an elevated temperature. The mass of solution is sectioned into small portions and each portion brought into contact with one substrate wafer by displacing one set of carrier plates relative to an interleaved set of carrier plates. Each portion is constrained to form an essentially uniform layer of the order of one millimeter in thickness over the growth face of the substrate wafer. Epitaxial growth is accomplished by reducing the temperature of the assembly.
Inventors
- 👤 H Verleur
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 07:41
CPC Classifications
C; C30; C30B; C30B19/00; C30B19/06; C30B19/065; H; H10; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418
Claims Analysis
Total Claims: 41
Claim 1
Independent Claim
29 words
A METHOD FOR THE SIMULTANEOUS EPITAXIAL GROWTH OF CRYSTALLINE LAYERS OF GROUP III-V COMPOUND SEMICONDUCTOR ON A PLURALITY OF CRYSTALLINE SUBSTRATE WAFERS FROM A PLURALITY OF SOLUTION PORTIONS COMPRISING:
Claim 2
Independent Claim
29 words
A METHOD FOR THE SIMULTANEOUS EPITAXIAL GROWTH OF CRYSTALLINE LAYERS OF GROUP III-V COMPOUND SEMICONDUCTOR ON A PLURALITY OF CRYSTALLINE SUBSTRATE WAFERS FROM A PLURALITY OF SOLUTION PORTIONS COMPRISING:
Claim 3
Dependent Claim
28 words
PLACING THE WAFERS IN AN APPARATUS TOGETHER WIHT BUT OUT OF CONTACT WITH A BODY OF CONSTITUENTS WHICH, WHEN HEATED, RESULTS IN A SOLUTION MASS OF NUTRIENT SOLUTION,
Claim 4
Dependent Claim
28 words
PLACING THE WAFERS IN AN APPARATUS TOGETHER WIHT BUT OUT OF CONTACT WITH A BODY OF CONSTITUENTS WHICH, WHEN HEATED, RESULTS IN A SOLUTION MASS OF NUTRIENT SOLUTION,
Claim 5
Dependent Claim
26 words
RAISING THE TEMPERATURES OF THE APPARATUS TO A FIRST TEMPERATURE AT WHICH THE NUTRIENT SOLUTION IS SATURATED WITH THE GROUP III-V COMPOUND SEMICONDUCTOR, SERIAL NO. 370,947
Claim 6
Dependent Claim
26 words
RAISING THE TEMPERATURES OF THE APPARATUS TO A FIRST TEMPERATURE AT WHICH THE NUTRIENT SOLUTION IS SATURATED WITH THE GROUP III-V COMPOUND SEMICONDUCTOR, SERIAL NO. 370,947
Claim 7
Dependent Claim
26 words
A method of claim 1 in which the solution portions are isolated from one another prior to their being brought into contact with the substrate wafers.
Claim 8
Dependent Claim
26 words
raising the temperature of the apparatus to a first temperature at which the nutrient solution is saturated with the Group III-V compound semiconductor, Serial No. 370,947
Claim 9
Dependent Claim
26 words
raising the temperature of the apparatus to a first temperature at which the nutrient solution is saturated with the Group III-V compound semiconductor, Serial No. 370,947
Claim 10
Dependent Claim
8 words
separating each solution portion from the solution mass,
Claim 11
Dependent Claim
8 words
separating each solution portion from the solution mass,
Claim 12
Dependent Claim
26 words
A method of claim 1 in which the solution portions are constrained at the same time as they are brought into contact with the substrate wafers.
Claim 13
Dependent Claim
7 words
SEPARATING EACH SOLUTION FROM THE SOLUTION MASS,
Claim 14
Dependent Claim
7 words
SEPARATING EACH SOLUTION FROM THE SOLUTION MASS,
Claim 15
Dependent Claim
12 words
CONTACTING EACH SOLUTION PORTION WITH A BROAD FACE OF ONE SUBSTRATE WAFGER,
Claim 16
Dependent Claim
12 words
CONTACTING EACH SOLUTION PORTION WITH A BROAD FACE OF ONE SUBSTRATE WAFGER,
Claim 17
Dependent Claim
29 words
A method of claim 1 in which the solution portions, which are brought into contact with the substrate wafers, together constitute more than one half of the solution mass.
Claim 18
Dependent Claim
12 words
contacting each solution portion with a broad face of one substrate wafer,
Claim 19
Dependent Claim
12 words
contacting each solution portion with a broad face of one substrate wafer,
Claim 20
Dependent Claim
20 words
constraining each solution portion in a direction perpendicular to the broad face to be less than 3 millimeters in thickness,
Claim 21
Dependent Claim
20 words
constraining each solution portion in a direction perpendicular to the broad face to be less than 3 millimeters in thickness,
Claim 22
Dependent Claim
33 words
A method of claim 1 in which epitaxial growth is terminated at a second temperature within 400* centigrade of the first temperature by removing the solution portions from contact with the substrate wafers.
Claim 23
Dependent Claim
20 words
CONSTRAINING EACH SOLUTION PORTION IN A DIRECTION PERPENDICULAR TO THE BROAD FACE TO BE LESS THAN 3 MILLIMETERS IN THICKNESS,
Claim 24
Dependent Claim
20 words
CONSTRAINING EACH SOLUTION PORTION IN A DIRECTION PERPENDICULAR TO THE BROAD FACE TO BE LESS THAN 3 MILLIMETERS IN THICKNESS,
Claim 25
Dependent Claim
16 words
REDUCING THE TEMPERATURE OF THE SOLUTION PORTIONS AND SUBSTRATE IN ORDER TO PRODUCE EPITAXIAL GROWTH AND
Claim 26
Dependent Claim
16 words
REDUCING THE TEMPERATURE OF THE SOLUTION PORTIONS AND SUBSTRATE IN ORDER TO PRODUCE EPITAXIAL GROWTH AND
Claim 27
Dependent Claim
19 words
A method of claim 1 in which the plurality of substrate wafers is composed of at least five wafers.
Claim 28
Dependent Claim
16 words
reducing the temperature of the solution portions and substrates in order to produce epitaxial growth and
Claim 29
Dependent Claim
16 words
reducing the temperature of the solution portions and substrates in order to produce epitaxial growth and
Claim 30
Dependent Claim
78 words
terminating epitaxial growth characterized in that the solution portions are simultaneously separated from the solution mass, simultaneously brought into contact with the substrate wafers and simultaneously constrained in the growth direction, each operation being accomplished by displacing a first set of carrier plates relative to a second set of carrier plates which second set is interleaved with the first set and in that the solution portions include neither the uppermost nor the lowermost quantity of the solution mass.
Claim 31
Dependent Claim
78 words
terminating epitaxial growth characterized in that the solution portions are simultaneously separated from the solution mass, simultaneously brought into contact with the substrate wafers and simultaneously constrained in the growth direction, each operation being accomplished by displacing a first set of carrier plates relative to a second set of carrier plates which second set is interleaved with the first set and in that the solution portions include neither the uppermost nor the lowermost quantity of the solution mass.
Claim 32
Dependent Claim
27 words
A method of claim 1 in which the Group III-V compound semiconductor is at least 80 percent a member of the gallium phosphide-gallium arsenide family of materials.
Claim 33
Dependent Claim
71 words
TERMINATING EPITAXIAL GROWTH CHARACTERIZED IN THAT THE SOLUTION PORTIONS ARE SIMULTANEOUSLY CONSTRAINED IN , THE SUBSTRATE WAFERS AND SIMULTANEOUSLY CONSTRAINED IN THE GROWTH DIRECTION, EACH OPERAION BEING ACCOMPLISHED BY DISPLACING A FIRST SET OF ACRRIER PLATES RELATIVE TO A SECOND SET OF CARRIER PLATES WHICH SECOND SETS IS INTERLEAVED WITH THE FIRST SET AND IN THAT THE SOLUTION PORTIONS INCLUDE NEITHER THE UPPERMOST NOR THE LOWERMOST QUANTITY OF THE SOLUTION MASS.
Claim 34
Dependent Claim
71 words
TERMINATING EPITAXIAL GROWTH CHARACTERIZED IN THAT THE SOLUTION PORTIONS ARE SIMULTANEOUSLY CONSTRAINED IN , THE SUBSTRATE WAFERS AND SIMULTANEOUSLY CONSTRAINED IN THE GROWTH DIRECTION, EACH OPERAION BEING ACCOMPLISHED BY DISPLACING A FIRST SET OF ACRRIER PLATES RELATIVE TO A SECOND SET OF CARRIER PLATES WHICH SECOND SETS IS INTERLEAVED WITH THE FIRST SET AND IN THAT THE SOLUTION PORTIONS INCLUDE NEITHER THE UPPERMOST NOR THE LOWERMOST QUANTITY OF THE SOLUTION MASS.
Claim 35
Dependent Claim
20 words
A method of claim 7 in which The Group III-V compound semiconductor is at least 99 percent by weight GaP.
Claim 36
Dependent Claim
46 words
A method of claim 7 in which the solution contains at least one member selected from the group consisting of S, Se, Te, Zn, Cd, Ge, Si, O and N in such quantity as to form less than one percent by weight of the crystalline layers.
Claim 37
Dependent Claim
21 words
A method of claim 9 resulting in the deposition of a zinc and oxygen doped epitaxial layer on the substrate wafer.
Claim 38
Dependent Claim
28 words
A method of claim 10 in which the substrate wafer consists essentially of an n-type bulk grown portion and a tellurium doped epitaxial crystalline layer deposited from solution.
Claim 39
Dependent Claim
39 words
A method of claim 10 including heat treating the wafer at a temperature between 400* C and 600* C for times between 3 hours and 60 hours subsequent to the formation of the zinc and oxygen doped epitaxial layer.
Claim 40
Dependent Claim
33 words
A method of claim 12 including electrically contacting the n-type portion of the wafer and the zinc-oxygen doped epitaxial layer so as to form a diode capable of emitting red-light when suitably biased.
Claim 41
Dependent Claim
15 words
A method of claim 1 in which the body of constituents is the nutrient solution.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-12-09 | 1978-06-10 | 1978-12-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-12-09 | 1982-06-10 | 1982-12-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-12-09 | 1986-06-10 | 1986-12-10 | $7700.00 | Window Closed / Lapsed |