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US4086108A
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Selective doping crystal growth method
Assignee: National Institute of Advanced Industrial Science and Technology
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Filing: 1977-03-28
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Granted: 1978-04-25
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Expires: 1997-03-28
Abstract
Abstract Molecular beams of elements constituting a crystal and ion beams prepared by ionizing dopant atoms and/or dopant molecules are simultaneously and uniformly directed to a surface of a substrate and a region of the surface which is not required to be doped is simultaneously irradiated with electron beams. The ion beams directed to the regions not to be doped are coupled with the electron beam prior to and on arrival at the region and electrically neutralized. Thus, the crystal grows in some regions without the dopant and the crystal also grows in other regions with the dopant.
Inventors
- 👤 Shunichi Gonda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:02
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/04; C23C14/048; C30; C30B; C30B23/00; C30B23/02; C30B23/04; H; H10; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y10; Y10S; Y10S148/00; Y10S148/045; Y10S148/169; Y10S438/00; Y10S438/914; Y10S438/925
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
66 words
A selective doping crystal growth method comprising the steps of irradiating uniformly a surface of a substrate with molecular beams constituting of constituent elements of a crystal and ion beams constituting of atoms and/or molecules as dopant and simultaneously irradiating specific regions of said surface where the doping is unnecessary with electron beams to neutralize said ion beam directed to said regions with said electron beam.
Claim 2
Dependent Claim
66 words
A selective doping crystal growth method comprising the steps of irradiating uniformly a surface of a substrate with molecular beams constituting of constituent elements of a crystal and ion beams constituting of atoms and/or molecules as dopant and simultaneously irradiating specific regions of said surface where the doping is unnecessary with electron beams to neutralize said ion beam directed to said regions with said electron beam.
Claim 3
Dependent Claim
22 words
A selective doping crystal growth method as claimed in claim 1, wherein said electron beam is deflected to irradiate said specific regions.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-04-24 | 1981-10-24 | 1982-04-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-04-24 | 1985-10-24 | 1986-04-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-04-24 | 1989-10-24 | 1990-04-25 | $7700.00 | Window Closed / Lapsed |