Patent US4080619A successfully refreshed from Google Patents.
US4080619A
Expired / Lapsed
US
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Bipolar type semiconductor device
Assignee: Sony Corp
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Filing: 1976-04-20
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Granted: 1978-03-21
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Expires: 1996-04-20
Abstract
Abstract A bipolar-type semiconductor device, such as a bipolar transistor, has a heavily doped emitter region, a lightly doped emitter region, a base region, a collector region and a passivation layer or layers on said regions. The passivation layer formed on a surface end of a PN junction between the collector region and the base region is a polycrystalline silicon containing oxygen atoms in a range between 14 and 35 atomic percents. The other passivation layer formed on a surface end of the other PN junction between the base region and the lightly doped emitter region is made of silicon-dioxide, which covers also a surface end of lightly doped and heavily doped (LH) junction between two emitter regions.
Inventors
- 👤 Kunizo Suzuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 02:47
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/131; H10D; H10D99/00; H10P; H10P95/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S257/00; Y10S257/905
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
156 words
A bipolar type semiconductor device comprising: (a) a collector region of one conductivity type; (b) a base region of the other conductivity type forming a collector-base junction with said collector region; (c) a lightly doped emitter region of said one conductivity type forming an emitter-base junction with said base region; (d) a heavily doped emitter region of said one conductivity type forming an electric barrier with said lightly doped emitter region; (e) a semi-insulating layer formed directly on a surface end of said collector-base junction, said semi-insulating layer having a resistivity between 10 7 and 10 10 ohm-cm.; (f) an insulating layer formed on a surface of said lightly doped emitter, on a surface end of said emitter-base junction and on a surface end of said electric barrier; and (g) electrodes for said emitter, base and collector; (h) said semi-insulating layer also extending on a surface of said insulating layer covering said lightly doped emitter region.
Claim 2
Dependent Claim
156 words
A bipolar type semiconductor device comprising: (a) a collector region of one conductivity type; (b) a base region of the other conductivity type forming a collector-base junction with said collector region; (c) a lightly doped emitter region of said one conductivity type forming an emitter-base junction with said base region; (d) a heavily doped emitter region of said one conductivity type forming an electric barrier with said lightly doped emitter region; (e) a semi-insulating layer formed directly on a surface end of said collector-base junction, said semi-insulating layer having a resistivity between 10 7 and 10 10 ohm-cm.; (f) an insulating layer formed on a surface of said lightly doped emitter, on a surface end of said emitter-base junction and on a surface end of said electric barrier; and (g) electrodes for said emitter, base and collector; (h) said semi-insulating layer also extending on a surface of said insulating layer covering said lightly doped emitter region.
Claim 3
Dependent Claim
41 words
A bipolar type semiconductor device according to claim 1, in which said semi-insulating layer is a polycrystalline silicon layer containing of oxygen atoms in a range between 14 and 35 atomic percents and said insulating layer is a silicon dioxide layer.
Claim 4
Dependent Claim
41 words
A bipolar type semiconductor device according to claim 1, in which said insulating layer has a surface recombination velocity at the surface of said lightly doped region lower than that of said semi-insulating layer at the surface of said collector region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-03-20 | 1981-09-19 | 1982-03-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-03-20 | 1985-09-19 | 1986-03-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-03-20 | 1989-09-19 | 1990-03-21 | $7700.00 | Window Closed / Lapsed |