Patent JPS5984576A successfully refreshed from Google Patents.
US4076559A
Expired / Lapsed
US
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Temperature gradient zone melting through an oxide layer
Assignee: General Electric Co
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Filing: 1977-03-18
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Granted: 1978-02-28
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Expires: 1997-03-18
Abstract
Abstract Disclosed is a method of manufacturing semiconductor devices by thermomigrating impurities through an oxide layer.
Inventors
- 👤 Mike F. Chang
- 👤 Thomas R. Anthony
- 👤 Harvey E. Cline
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 12:48
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/923
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
96 words
A method of manufacturing semiconductor devices, said method comprising the steps of: providing a body of semiconductor material, providing an oxide layer on at least selected portions of at least one surface of said body, the oxide of said oxide layer being selected from the group consisting of silicon oxide and germanium oxide; selectively depositing an impurity material on said oxide layer; and exposing said body to an elevated temperature and to a thermal migration temperature gradient through said body and said oxide layer, whereby said impurity material thermally migrates through said oxide and said body.
Claim 2
Independent Claim
96 words
A method of manufacturing semiconductor devices, said method comprising the steps of: providing a body of semiconductor material, providing an oxide layer on at least selected portions of at least one surface of said body, the oxide of said oxide layer being selected from the group consisting of silicon oxide and germanium oxide; selectively depositing an impurity material on said oxide layer; and exposing said body to an elevated temperature and to a thermal migration temperature gradient through said body and said oxide layer, whereby said impurity material thermally migrates through said oxide and said body.
Claim 3
Dependent Claim
23 words
A method accoding to claim 1 wherein said oxide layer-providing step comprises the substep of depositing said oxide layer on said one surface.
Claim 4
Dependent Claim
24 words
A method according to claim 1 wherein said body is one member of the group consisting of silicon, germanium, silicon carbide, and gallium arsenide.
Claim 5
Dependent Claim
25 words
A method according to claim 3 wherein said oxide layer-providing step comprises the substep of thermally growing said oxide layer in situ on said body.
Claim 6
Dependent Claim
11 words
A method according to claim 1 wherein said body is silicon.
Claim 7
Dependent Claim
25 words
A method according to claim 5 wherein said oxide layer-providing step comprises the substep of thermally growing said oxide layer in situ on said body.
Claim 8
Dependent Claim
20 words
A method according to claim 1 wherein said impurity material is selected from the group consisting of aluminum and gallium.
Claim 9
Dependent Claim
23 words
A method according to claim 7 wherein said step of selectivity depositing said impurity material comprises blanket deposition and selective photolithographic removal substeps.
Claim 10
Dependent Claim
12 words
A method according to claim 1 wherein said impurity material is aluminum.
Claim 11
Dependent Claim
20 words
A method according to claim 1 wherein said oxide layer is of a thickness greater than about 6,000 Angstrom units.
Claim 12
Dependent Claim
17 words
A method according to claim 10 wherein said oxide layer is about 12,000 Angstrom units in thickness.
Claim 13
Independent Claim
71 words
A method of manufacturing semiconductor devices, said method comprising the steps of: providing a body of monocrystalline silicon having a layer of silicon oxide on one surface thereof; selectively depositing an impurity material on said oxide layer; and exposing said body to an elevated temperature and inducing a temperature gradient across said body and oxide layer such that said impurity thermally migrates through said oxide layer and then through said body.
Claim 14
Independent Claim
71 words
A method of manufacturing semiconductor devices, said method comprising the steps of: providing a body of monocrystalline silicon having a layer of silicon oxide on one surface thereof; selectively depositing an impurity material on said oxide layer; and exposing said body to an elevated temperature and inducing a temperature gradient across said body and oxide layer such that said impurity thermally migrates through said oxide layer and then through said body.
Claim 15
Dependent Claim
12 words
A method according to claim 12 wherein said body is a wafer.
Claim 16
Dependent Claim
20 words
A method according to claim 12 wherein said step of providing comprises the substep of thermally growing said oxide layer.
Claim 17
Dependent Claim
20 words
A method according to claim 12 wherein said oxide layer is of a thickness greater than about 6,000 Angstrom units.
Claim 18
Dependent Claim
17 words
A method according to claim 15 wherein said oxide layer is about 12,000 Angstrom units in thickness.
Claim 19
Dependent Claim
11 words
A method according to claim 12 wherein said impurity is aluminum.
Claim 20
Dependent Claim
23 words
A method according to claim 17 wherein said step of selectively depositing said impurity material comprises blanket deposition and selective photolithographic removal substeps.
Claim 21
Dependent Claim
20 words
A method according to claim 18 wherein said oxide layer is of a thickness greater than about 6,000 Angstrom units.
Claim 22
Dependent Claim
17 words
A method according to claim 19 wherein said oxide layer is about 12,000 Angstrom units in thickness.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-02-27 | 1981-08-29 | 1982-02-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-02-27 | 1985-08-29 | 1986-02-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-02-27 | 1989-08-29 | 1990-02-28 | $7700.00 | Window Closed / Lapsed |