US3897277A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High aspect ratio P-N junctions by the thermal gradient zone melting technique
Assignee: General Electric Co
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Filing: 1973-10-30
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Granted: 1975-07-29
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Expires: 1993-10-30
Abstract
Abstract A thermal gradient zone melting technique is employed to migrate an array of metal buttons through a body of semiconductor material to form high aspect ratio P-N junctions therein. Semiconductor devices embodying such P-N junctions are suitable for employment in X-ray and infrared detection and imaging. Each button preferably has the configuration of an equilateral triangle and the array preferably has a hexagonal configuration.
Inventors
- 👤 Samuel M Blumenfeld
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 15:08
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/124; H10D62/126; C; C30; C30B; C30B13/00; C30B13/02; C30B13/06; H10F; H10F99/00; H10P; H10P95/00; H10P95/50
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
168 words
A PROCESS FOR MAKING HIGH ASPECT RATIO P-N JUNCTIONS COMPRISING THE PROCESS STEPS OF: A. DEPOSITING A LAYER OF METAL OF APPROXIMATELY 20 MICRON THICKNESS ON SELECTED SURFACE AREAS OF ONE OF TWO MAJOR OPPOSED SURFACES OF A BODY OF SINGLE CRYSTAL SEMICONDUCTOR MATERIAL TO FORM AN ARRAY OF METAL BUTTONS THEREON: B. ALLOYING EACH METAL BUTTOM TO THE SURFACE DISPOSED ON C. HEATING THE BODY AND THE METAL ARAY TO AN ELEVATED TEMPERATURE TO FORM A MELT OF THE METAL OF EACH BOTTOM AND THE SEMICONDUCTOR MATERIAL OF THE BODY IMMEDIATELY ADJACENT THERETO: D. ESTABLISHING A TEMPERATURE GRADIENT SUBSTANTALLY PERPENDICULAR TO THE TWO OPPOSED SURFACES AND SUBSTANTANTIALLY PARALLEL TO THE VERTICAL AXIS OF THE BODY, AND E. MIGRATING EACH MELT THROUGH THE BODY ALONG THE TEMPERATURE GRADIENT FROM THE ONE TO THE OTHER OF THE TWO MAJOR OPPOSED SURFACES TO FORM A REGION OF RECRYSTALLIZED SEMICONDUCTOR MATERIAL OF THE BODY HAVING SOLID SOLUBILITY OF THE METAL THEREIN TO IMPART A SELECTIVE TYPE CONDUCTIVITY AND SELECTIVE RESISTIVITY THERETO.
Claim 2
Dependent Claim
168 words
A PROCESS FOR MAKING HIGH ASPECT RATIO P-N JUNCTIONS COMPRISING THE PROCESS STEPS OF: A. DEPOSITING A LAYER OF METAL OF APPROXIMATELY 20 MICRON THICKNESS ON SELECTED SURFACE AREAS OF ONE OF TWO MAJOR OPPOSED SURFACES OF A BODY OF SINGLE CRYSTAL SEMICONDUCTOR MATERIAL TO FORM AN ARRAY OF METAL BUTTONS THEREON: B. ALLOYING EACH METAL BUTTOM TO THE SURFACE DISPOSED ON C. HEATING THE BODY AND THE METAL ARAY TO AN ELEVATED TEMPERATURE TO FORM A MELT OF THE METAL OF EACH BOTTOM AND THE SEMICONDUCTOR MATERIAL OF THE BODY IMMEDIATELY ADJACENT THERETO: D. ESTABLISHING A TEMPERATURE GRADIENT SUBSTANTALLY PERPENDICULAR TO THE TWO OPPOSED SURFACES AND SUBSTANTANTIALLY PARALLEL TO THE VERTICAL AXIS OF THE BODY, AND E. MIGRATING EACH MELT THROUGH THE BODY ALONG THE TEMPERATURE GRADIENT FROM THE ONE TO THE OTHER OF THE TWO MAJOR OPPOSED SURFACES TO FORM A REGION OF RECRYSTALLIZED SEMICONDUCTOR MATERIAL OF THE BODY HAVING SOLID SOLUBILITY OF THE METAL THEREIN TO IMPART A SELECTIVE TYPE CONDUCTIVITY AND SELECTIVE RESISTIVITY THERETO.
Claim 3
Dependent Claim
17 words
The process of claim 1 wherein the depositing of the layer of metal is practiced by sputtering.
Claim 4
Dependent Claim
26 words
The process of claim 1 wherein the material of the body is one selected from the group consisting of silicon, silicon carbide, germanium, and gallium arsenide.
Claim 5
Dependent Claim
14 words
The process of claim 3 wherein the material of the metal layer is aluminum.
Claim 6
Dependent Claim
19 words
The process of claim 3 wherein the material of the metal is aluminum, and the semiconductor material is silicon.
Claim 7
Dependent Claim
32 words
The process of claim 1 wherein the depositing of the layer of metal is practiced by thermocompression bonding to alloy the metal to the surface of the body at the same time.
Claim 8
Dependent Claim
23 words
The process of claim 1 wherein each metal button has an equilateral triangular shaped configuration and measures about 10 mil on each side.
Claim 9
Dependent Claim
20 words
The process of claim 7 wherein the array of metal buttons is disposed in a hexagonal configuration on the surface.
Claim 10
Dependent Claim
25 words
The process of claim 8 including the process step of centering each button 20 mils from each other before alloying the same to the surface.
Claim 11
Dependent Claim
26 words
The process of claim 9 wherein the material of the body is one selected from the group consisting of silicon, silicon carbide, germanium, and gallium arsenide.
Claim 12
Dependent Claim
14 words
The process of claim 10 wherein the material of the metal layer is aluminum.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-07-28 | 1979-01-27 | 1979-07-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-07-28 | 1983-01-27 | 1983-07-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-07-28 | 1987-01-27 | 1987-07-29 | $7700.00 | Window Closed / Lapsed |