US3899362A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thermomigration of metal-rich liquid wires through semiconductor materials
Assignee: General Electric Co
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Filing: 1973-10-30
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Granted: 1975-08-12
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Expires: 1993-10-30
Abstract
Abstract Liquid wires of metal-rich semiconductor material are migrated by a temperature gradient zone melting process through bodies of semiconductor material. Planar orientation of the surface through which thermomigration is initiated, directions of wire alignment in the surface, wire sizes and direction of wire migration are disclosed herein. P-N junctions produced behind the thermomigrated wires have substantially ideal breakdown voltage characteristics.
Inventors
- 👤 Harvey E Cline
- 👤 Thomas R Anthony
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 16:06
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/50; H10D; H10D99/00
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
235 words
A METHOD FOR MIGRATING A VAPOR DEPOSITED METAL WIRE THROUGH A BODY OF SEMICONDUCTOR MATERIAL COMPRISING THE PROCESS STEPS OF: A. SELECTING A BODY OF SEMICONDUCTOR MATERIAL SO THAT THE BODY HAS AT LEAST ONE SURFACE HAVING A PREFERRED PLANAR CRYSTAL STRUCTURE ORINATATION, THE VERTICAL AXIS OF THE BODY BEING SUBSTANTIALLY ALIGNED WITH A FIRST AXIS OF THE CRYSTAL STRUCTURE, B. ETCHING SELECTIVELY THE SURFACE HAVING THE PREFERRED PLANAR CRYSTAL STRUCTURE ORIENTATION TO FORM AT LEAST ONE TROUGH-LIKE DEPRESSION IN THE SURFACE IN A PREFERRED CRYSTAL WIRE DIRECTION WHICH IS ORIENTED TO SUBSTANTIALLY COINCIDE WITH AT LEAST ONE OF THE OTHER AXIS OF THE CRYSTAL STRUCTURE, C. VAPOR DEPOSITING A LAYER OF A METAL IN THE AT LEAST ONE TROUGH-LIKE DEPRESSION ON THE SELECTED SURFACE OF THE BODY OF SEMICONDUCTOR MATERIAL, D. HEATING THE BODY AND THE METAL TO A TEMPERATURE SUFFICIENT TO FORM A LIQUID WIRE OF METAL-RICH MATERIAL IN EACH OF THE TOUGH-LIKE DEPRESSIONS ON THE SURFACES OF THE BODY, E. ESTABLISHING A TEMPERATURE GRADIENT ALONG SUBSTANTIALLY THE VERTICAL AXIS OF THE BODY AND THE FIRST AXIS OF THE CRYSTAL STRUCTURE, AND F. MIGRATING THE METAL-RICH LIQUID WIRE THROUGH THE BODY ALONG THE FIRST AXIS OFTHE CRYSTAL STRUCTURE OF FORM A PLANAR REGION OF RECRYSTALLIZED MATERIAL OF THE BODY HAVING SOLID SOLUBILITY OF THE METAL OF THE WIRE THEREIN TO IMPART A SELECTED TYPE CONDUCTIVITY AND A SELECTED LEVEL OF A RESISTIVITY THERETO.
Claim 2
Independent Claim
235 words
A METHOD FOR MIGRATING A VAPOR DEPOSITED METAL WIRE THROUGH A BODY OF SEMICONDUCTOR MATERIAL COMPRISING THE PROCESS STEPS OF: A. SELECTING A BODY OF SEMICONDUCTOR MATERIAL SO THAT THE BODY HAS AT LEAST ONE SURFACE HAVING A PREFERRED PLANAR CRYSTAL STRUCTURE ORINATATION, THE VERTICAL AXIS OF THE BODY BEING SUBSTANTIALLY ALIGNED WITH A FIRST AXIS OF THE CRYSTAL STRUCTURE, B. ETCHING SELECTIVELY THE SURFACE HAVING THE PREFERRED PLANAR CRYSTAL STRUCTURE ORIENTATION TO FORM AT LEAST ONE TROUGH-LIKE DEPRESSION IN THE SURFACE IN A PREFERRED CRYSTAL WIRE DIRECTION WHICH IS ORIENTED TO SUBSTANTIALLY COINCIDE WITH AT LEAST ONE OF THE OTHER AXIS OF THE CRYSTAL STRUCTURE, C. VAPOR DEPOSITING A LAYER OF A METAL IN THE AT LEAST ONE TROUGH-LIKE DEPRESSION ON THE SELECTED SURFACE OF THE BODY OF SEMICONDUCTOR MATERIAL, D. HEATING THE BODY AND THE METAL TO A TEMPERATURE SUFFICIENT TO FORM A LIQUID WIRE OF METAL-RICH MATERIAL IN EACH OF THE TOUGH-LIKE DEPRESSIONS ON THE SURFACES OF THE BODY, E. ESTABLISHING A TEMPERATURE GRADIENT ALONG SUBSTANTIALLY THE VERTICAL AXIS OF THE BODY AND THE FIRST AXIS OF THE CRYSTAL STRUCTURE, AND F. MIGRATING THE METAL-RICH LIQUID WIRE THROUGH THE BODY ALONG THE FIRST AXIS OFTHE CRYSTAL STRUCTURE OF FORM A PLANAR REGION OF RECRYSTALLIZED MATERIAL OF THE BODY HAVING SOLID SOLUBILITY OF THE METAL OF THE WIRE THEREIN TO IMPART A SELECTED TYPE CONDUCTIVITY AND A SELECTED LEVEL OF A RESISTIVITY THERETO.
Claim 3
Dependent Claim
26 words
The method of claim 1 wherein the material of the body is one selected from the group consisting of silicon, silicon carbide, gallium arsenide and germanium.
Claim 4
Dependent Claim
21 words
The method of claim 2 wherein the material is silicon having N-type conductivity, and the metal of the wire is aluminum.
Claim 5
Dependent Claim
23 words
The method of claim 3 wherein the temperature gradient is 50*C per centimeter, and the migration is practiced at a temperature of 1200*C.
Claim 6
Dependent Claim
37 words
The method of claim 2 wherein the preferred planar crystal orientation is (110); the at least one trough-like depression is oriented in a <110> direction, and the orientation along which migration is practiced is the <110> axis.
Claim 7
Dependent Claim
16 words
The method of claim 5 wherein the metal-wire size is no greater than approximately 150 microns.
Claim 8
Dependent Claim
52 words
The method of claim 2 wherein the preferred planar crystal orientation is (100), the at least one trough-like depression is oriented in one of the directions of the crystal structure axes of the group consisting of <011> and <011>, the direction of the first axis along which migration is practiced is <100>.
Claim 9
Dependent Claim
16 words
The method of claim 7 wherein the metal-wire size is no greater than approximately 100 microns.
Claim 10
Dependent Claim
52 words
The method of claim 2 wherein the preferred planar crystal orientation is (111), the at least one trough-like depression is oriented in a direction which is any one of the wire directions in the (111) planar region, and the direction of the first axis along which the migration is practiced is <111>.
Claim 11
Dependent Claim
30 words
The method of claim 9 wherein the at least one trough-like depression is oriented in a direction which is one selected from the group consisting of <011>, <101> and <110>.
Claim 12
Dependent Claim
30 words
The method of claim 9 wherein the at least one trough-like depression is oriented in a direction which is one selected from the group consisting of <112>, <211>, and <121>.
Claim 13
Dependent Claim
24 words
The method of claim 9 wherein the semiconductor material is silicon having N-type conductivity, and the metal of the vapor deposited wire is aluminum.
Claim 14
Dependent Claim
16 words
The method of claim 9 wherein the metal-wire size is no greater than approximately 500 microns.
Claim 15
Dependent Claim
55 words
The method of claim 1 wherein the preferred planar crystal orientation is (100); the at least one trough-like depression is oriented in any direction; the direction of the first axis along which migration is practiced is <100>, and the thickness of the body is from 3 to 4 times the thickness of the metal wire.
Claim 16
Dependent Claim
50 words
The method of claim 1 wherein the preferred planar crystal orientation is (100); the at least one trough-like depression is oriented in any direction; the direction of the first axis along which migration is practiced is <100>, and the thickness of the body is not greater than approximately 100 microns.
Claim 17
Dependent Claim
55 words
The method of claim 1 wherein the preferred planar crystal orientation is (111); the at least one trough-like depression is oriented in any direction; the direction of the first axis along which migration is practiced is <111>, and the thickness of the body is from 3 to 4 times the thickness of the metal wire.
Claim 18
Dependent Claim
50 words
The method of claim 1 wherein the preferred planar crystal orientation is (111); the at least one trough-like depression is oriented in any direction; the direction of the first axis along which thermomigration is practiced is <111>, and the thickness of the body is not greater than approximately 100 microns.
Claim 19
Dependent Claim
55 words
The method of claim 1 wherein the preferred planar crystal orientation is (110); the at least one trough-like depression is oriented in any direction; the direction of the first axis along which migration is practiced is <110>, and the thickness of the body is from 3 to 4 times the thickness of the metal wire.
Claim 20
Dependent Claim
50 words
The method of claim 1 wherein the preferred planar crystal orientation is (110); the at least one trough-like depression is oriented in any direction; the direction of the first axis along which migration is practiced is (110), and the thickness of the body is not greater than approximately 100 microns.
References Cited (Backward Citations)
US2813048A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-08-11 | 1979-02-10 | 1979-08-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-08-11 | 1983-02-10 | 1983-08-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-08-11 | 1987-02-10 | 1987-08-12 | $7700.00 | Window Closed / Lapsed |