US4063973A
Expired / Lapsed
US
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Method of making a semiconductor device
Assignee: Toshiba Corp
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Filing: 1976-11-04
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Granted: 1977-12-20
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Expires: 1996-11-04
Abstract
Abstract A non-monocrystalline semiconductor layer which contains predetermined impurities is disposed on a semiconductor substrate. Then, on this semiconductor layer an oxide layer is formed which contains the same type impurities as in the semiconductor layer. The device is then heated at a high temperature, thus causing the impurities to diffuse into the semiconductor substrate and form impurity diffused regions. Suitable electrodes are deposited on the impurity diffused regions.
Inventors
- 👤 Kei Kirita
- 👤 Yasutaka Tsuji
- 👤 Takahiko Moriya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 19:32
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/17; H10P32/171; H10P32/14; H10P32/1408; H10P32/1414; H10W; H10W15/00; H10W15/01; Y; Y10; Y10S; Y10S148/00; Y10S148/085; Y10S148/122
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
93 words
A method of making a semiconductor device comprising: a. preparing a semiconductor substrate; b. depositing a non-monocrystalline semiconductor layer doped with predetermined impurity atoms on at least a portion of said semiconductor substrate; c. depositing an oxide layer doped with the same type of impurity atoms as said predetermined impurity atoms on said non-monocrystalline semiconductor layer, thus forming a double layer diffusion source; and d. heating the semiconductor substrate to diffuse said impurity atoms from said double layer diffusion source into the semiconductor substrate and to form a diffused region in the substrate.
Claim 2
Independent Claim
93 words
A method of making a semiconductor device comprising: a. preparing a semiconductor substrate; b. depositing a non-monocrystalline semiconductor layer doped with predetermined impurity atoms on at least a portion of said semiconductor substrate; c. depositing an oxide layer doped with the same type of impurity atoms as said predetermined impurity atoms on said non-monocrystalline semiconductor layer, thus forming a double layer diffusion source; and d. heating the semiconductor substrate to diffuse said impurity atoms from said double layer diffusion source into the semiconductor substrate and to form a diffused region in the substrate.
Claim 3
Dependent Claim
37 words
The method recited in claim 1 wherein step (a) comprises preparing a Si substrate; and step (b) comprises depositing a non-monocrystalline Si layer doped with predetermined impurity atoms on at least a portion of said Si substrate.
Claim 4
Dependent Claim
47 words
The method recited in claim 1 wherein step (b) comprises depositing a non-monocrystalline semiconductor layer doped with over 1 × 10 21 /cm 3 of impurity atoms; and step (c) comprises depositing an oxide layer doped with over 1 × 10 21 /cm 3 of impurity atoms.
Claim 5
Dependent Claim
43 words
The method recited in claim 3 wherein step (b) comprises depositing a non-monocrystalline semiconductor layer having a thickness in the range 50 to 500 A; and step (c) comprises depositing an oxide layer having a thickness in the range 500 to 4000 A.
Claim 6
Dependent Claim
21 words
The method recited in claim 1 including the step of using the diffused region as the emitter of a bipolar transistor.
Claim 7
Dependent Claim
18 words
The method recited in claim 1 wherein step (d) comprises heating the semiconductor substrate in an oxidizing ambient.
Claim 8
Dependent Claim
50 words
The method recited in claim 1 wherein step (d) comprises heating the semiconductor substrate at a temperature in the range of 900° C to 1100° C to diffuse said impurity atoms from said double layer diffusion source into the semiconductor substrate and to form a diffused region in the substrate.
Claim 9
Independent Claim
132 words
A method of making a semiconductor device comprising: a. preparing a semiconductor substrate; b. depositing a non-monocrystalline semiconductor layer doped with predetermined impurity atoms on at least a portion of said semiconductor substrate; c. depositing an oxide layer doped with the same type impurity atoms as said predetermined impurity atoms on said non-monocrystalline semiconductor layer, thus forming a double layer diffusion source; d. heating the semiconductor substrate to diffuse said impurity atoms from said double layer diffusion source into the semiconductor substrate and to form a diffused region in the substrate; e. removing said double layer diffusion source to expose a fresh surface of the semiconductor substrate; f. forming an epitaxial semiconductor layer on the fresh surface of the semiconductor substrate; and g. forming semiconductor device elements in said epitaxial semiconductor layer.
Claim 10
Independent Claim
132 words
A method of making a semiconductor device comprising: a. preparing a semiconductor substrate; b. depositing a non-monocrystalline semiconductor layer doped with predetermined impurity atoms on at least a portion of said semiconductor substrate; c. depositing an oxide layer doped with the same type impurity atoms as said predetermined impurity atoms on said non-monocrystalline semiconductor layer, thus forming a double layer diffusion source; d. heating the semiconductor substrate to diffuse said impurity atoms from said double layer diffusion source into the semiconductor substrate and to form a diffused region in the substrate; e. removing said double layer diffusion source to expose a fresh surface of the semiconductor substrate; f. forming an epitaxial semiconductor layer on the fresh surface of the semiconductor substrate; and g. forming semiconductor device elements in said epitaxial semiconductor layer.
Claim 11
Dependent Claim
28 words
A method as in claim 8, including the steps of forming a bipolar transistor in said epitaxial semiconductor layer and connecting the collector electrode to said diffused region.
Claim 12
Independent Claim
120 words
A method of making a MOS field effect transistor comprising: a. forming a diffusion mask layer on the surface of a semiconductor substrate; b. forming windows in said diffusion mask layer through which source and drain diffusion is carried out; c. depositing a non-monocrystalline semiconductor layer doped with predetermined impurity atoms on the diffusion mask layer and within the windows; d. depositing an oxide layer doped with the same type impurity atoms as said predetermined impurity atoms on said non-monocrystalline semiconductor layer, thus forming a double layer diffusion source; and e. heating the semiconductor substrate to diffuse said impurity atoms from said double layer diffusion source into the semiconductor substrate and to form source and drain regions in the substrate.
Claim 13
Independent Claim
120 words
A method of making a MOS field effect transistor comprising: a. forming a diffusion mask layer on the surface of a semiconductor substrate; b. forming windows in said diffusion mask layer through which source and drain diffusion is carried out; c. depositing a non-monocrystalline semiconductor layer doped with predetermined impurity atoms on the diffusion mask layer and within the windows; d. depositing an oxide layer doped with the same type impurity atoms as said predetermined impurity atoms on said non-monocrystalline semiconductor layer, thus forming a double layer diffusion source; and e. heating the semiconductor substrate to diffuse said impurity atoms from said double layer diffusion source into the semiconductor substrate and to form source and drain regions in the substrate.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-12-19 | 1981-06-20 | 1981-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-12-19 | 1985-06-20 | 1985-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-12-19 | 1989-06-20 | 1989-12-20 | $7700.00 | Window Closed / Lapsed |