← Back to Patent Explorer
US4061928A Expired / Lapsed US ⏱️ 0.0 years remaining

Circuit arrangement for the protection of inputs of integrated MOS circuits

Assignee: Siemens AG
•
Filing: 1976-08-25
•
Granted: 1977-12-06
•
Expires: 1996-08-25
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A circuit arrangement for the protection of inputs of integrated MOS circuits against excessive voltages, for example as a consequence of static charges, includes a first circuit means connected to the MOS circuit and having two bypass circuits reacting at different input voltage values and having a high-ohmic compensating resistance, and second circuit means is connected ahead of the first circuit and comprises a bypass circuit and a high-ohmic compensating resistance.

Inventors

  • 👤 Heinrich Hubert Kessler

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 06:43
CPC Classifications
H; H02; H02H; H02H9/00; H02H9/04; H02H9/045; H02H9/046; H10; H10D; H10D89/00; H10D89/60; H10D89/601

Claims Analysis

Total Claims: 3
Claim 1
Independent Claim 157 words
A protection circuit for protecting an input of an integrated MOS circuit against excessive voltages, the integrated MOS circuit connected across first and second supply terminals, comprising: an input; a pn bypass diode connected between said input and the first supply terminal; a first MOS transistor including a source-drain path connected between the second supply terminal and an input of said MOS circuit and a gate connected to said input of said MOS circuit; a gate controlled pn diode connected between said input of said MOS circuit and the first supply terminal; a first resistor connected with a first terminal to said input of said MOS circuit; a second MOS transistor including a source-drain path connected between a second terminal of said first resistor and said first supply terminal and a gate connected to said second terminal of said first resistor; and a second resistor connected between said second terminal of said first resistor and said input.
Claim 2
Dependent Claim 157 words
A protection circuit for protecting an input of an integrated MOS circuit against excessive voltages, the integrated MOS circuit connected across first and second supply terminals, comprising: an input; a pn bypass diode connected between said input and the first supply terminal; a first MOS transistor including a source-drain path connected between the second supply terminal and an input of said MOS circuit and a gate connected to said input of said MOS circuit; a gate controlled pn diode connected between said input of said MOS circuit and the first supply terminal; a first resistor connected with a first terminal to said input of said MOS circuit; a second MOS transistor including a source-drain path connected between a second terminal of said first resistor and said first supply terminal and a gate connected to said second terminal of said first resistor; and a second resistor connected between said second terminal of said first resistor and said input.
Claim 3
Dependent Claim 16 words
The protection circuit of claim 1, wherein said second MOS transistor comprises a thick-oxide MOS transistor.

References Cited (Backward Citations)

US3395290A Cited
US3676742A Cited
US3712995A Cited
US3947727A Cited
US3967295A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1980-12-05 1981-06-06 1981-12-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1984-12-05 1985-06-06 1985-12-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1988-12-05 1989-06-06 1989-12-06 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag