Patent US4052253A successfully refreshed from Google Patents.
← Back to Patent Explorer
US4052253A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor-oxide etchant

Assignee: Motorola Solutions Inc
•
Filing: 1976-09-27
•
Granted: 1977-10-04
•
Expires: 1996-09-27
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract An etchant for semiconductors having a high preferential etch rate for doped silica particularly phosphorous doped silica, consisting of a 20:20:1 mixture, by volume, of 37% hydrochloric acid, deionized water, and 49% hydrofluoric acid. The etchant is particularly useful in a semiconductor process wherein an emitter opening is washed out following the diffusion thereof.

Inventors

  • 👤 Thomas J. Kingzett

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 14:33
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/40; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283

Claims Analysis

Total Claims: 3
Claim 1
Independent Claim 58 words
In a process wherein an emitter is formed in a silicon semiconductor through a diffusion window and an oxide formed thereover whereafter the emitter opening is cleaned out by immersing the silicon semiconductor in an etch solution the improvement comprising an etch consisting essentially of hydrochloric acid; hydrofluoric acid and water having a PH of less than 1.
Claim 2
Dependent Claim 58 words
In a process wherein an emitter is formed in a silicon semiconductor through a diffusion window and an oxide formed thereover whereafter the emitter opening is cleaned out by immersing the silicon semiconductor in an etch solution the improvement comprising an etch consisting essentially of hydrochloric acid; hydrofluoric acid and water having a PH of less than 1.
Claim 3
Dependent Claim 25 words
A process as recited in claim 1 wherein said etch consists of a 20:1:20 mixture by volume of 37% HCL, 49% HF and deionized water.

References Cited (Backward Citations)

US2981610A Cited
US3507716A Cited
US3497407A Cited
US3600241A Cited
US3761313A Cited
US3759762A Cited
US3769109A Cited
US3841904A Cited
US3839111A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1980-10-03 1981-04-04 1981-10-04 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1984-10-03 1985-04-04 1985-10-04 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1988-10-03 1989-04-04 1989-10-04 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag