US4047196A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High voltage semiconductor device having a novel edge contour
Assignee: RCA Corp
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Filing: 1976-08-24
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Granted: 1977-09-06
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Expires: 1996-08-24
Abstract
Abstract A high voltage semiconductor device structure comprises a novel edge contour which directly contributes to increased voltage handling capability. Such a structure may further comprise a collector region shaped in coordination with the edge contour to provide a device having higher voltage capability.
Inventors
- 👤 Joseph Paul White
- 👤 Peter Joseph Kannam
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 17:41
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/137; H10D62/102; H10D62/103; H10D62/104; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/137
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
160 words
A semiconductor device comprising: a body of semiconductor material having first and second major opposing surfaces and a peripheral edge extending therebetween, said body initially having a one type conductivity; a first region having a second type conductivity extending within said body, said first region forming a first PN junction with said body at the interface therewith, said junction comprising an edge segment extending substantially perpendicular to said first surface, a bottom segment extending substantially parallel with said first surface and a radius segment connecting said edge segment and said bottom segment; a contoured portion of said edge, said contour beginning at said first surface in said first region and extending toward said second surface to a first terrace, said first terrace intersecting said edge segment of said first PN junction, said contour, from a point near said intersection, further extending toward said second surface to a second terrace, said contour being concave between said intersection and said second terrace.
Claim 2
Dependent Claim
160 words
A semiconductor device comprising: a body of semiconductor material having first and second major opposing surfaces and a peripheral edge extending therebetween, said body initially having a one type conductivity; a first region having a second type conductivity extending within said body, said first region forming a first PN junction with said body at the interface therewith, said junction comprising an edge segment extending substantially perpendicular to said first surface, a bottom segment extending substantially parallel with said first surface and a radius segment connecting said edge segment and said bottom segment; a contoured portion of said edge, said contour beginning at said first surface in said first region and extending toward said second surface to a first terrace, said first terrace intersecting said edge segment of said first PN junction, said contour, from a point near said intersection, further extending toward said second surface to a second terrace, said contour being concave between said intersection and said second terrace.
Claim 3
Dependent Claim
22 words
A semiconductor device as claimed in claim 1 wherein: said first and said second terraces are substantially parallel to said first surface.
Claim 4
Dependent Claim
19 words
A semiconductor device as claimed in claim 1 wherein: said second terrace is substantially coplanar with said bottom segment.
Claim 5
Dependent Claim
19 words
A semiconductor device as claimed in claim 1 further comprising: a layer of passivating material on said contoured portion.
Claim 6
Dependent Claim
18 words
A semiconductor device as claimed in claim 1 wherein: said first terrace intersects said edge segment substantially perpendicularly.
Claim 7
Dependent Claim
70 words
A semiconductor device as claimed in claim 1 further comprising: a second region within said first region having said second type conductivity, said second region being adjacent said first surface; at least one third region within said second region having said one type conductivity, said third region being adjacent said first surface; and a fourth region adjacent said second surface extending into said body and having said one type conductivity.
Claim 8
Dependent Claim
23 words
A semiconductor device as claimed in claim 6 wherein: said second region has a comparatively higher surface carrier concentration than said first region.
Claim 9
Dependent Claim
21 words
A semiconductor device as claimed in claim 6 wherein: said fourth region has a comparatively higher carrier concentration than said body.
Claim 10
Dependent Claim
29 words
A semiconductor device as claimed in claim 6 wherein: said fourth region further comprises a portion extending comparatively further into said body than the remainder of said fourth region.
Claim 11
Dependent Claim
20 words
A semiconductor device as claimed in claim 9 wherein: said extended portion is substantially vertically aligned with said third region.
Claim 12
Dependent Claim
45 words
A semiconductor device as claimed in claim 10 wherein: said device is a transistor having said third region as an emitter region, said first and said second regions together being a base region and said fourth region and said body material being a collector region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-09-05 | 1981-03-07 | 1981-09-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-09-05 | 1985-03-07 | 1985-09-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-09-05 | 1989-03-07 | 1989-09-06 | $7700.00 | Window Closed / Lapsed |