US3586549A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing diffused junctions in planar semiconductive devices
Assignee: General Electric Co
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Filing: 1969-08-08
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Granted: 1971-06-22
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Expires: 1989-08-08
Abstract
Abstract IN THE FABRICATION OF DIFFUSED PLANAR SEMICONDUCTIVE DEVICES, JUNCTIONS HAVING REDUCED RADIUS OF CURVATURES ARE PRODUCED BY ETCHING, THE SURFACE OF THE SEMICONDUCTOR AFTER ETCHING AWAY OF A DIFFUSION MASK AND PRIOR TO ACTI- VATOR INTO THE SEMICONDUCTOR. RESULTANT DEVICES HAVE HIGHER BREAKDOWN VOLTAGES AND LOWER LEAKAGE CURRENTS.
Inventors
- 👤 Peter V Gray
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 09:15
CPC Classifications
H; H10; H10D; H10D62/00; H10D1/00; H10D1/40; H10D99/00; H10P; H10P10/00; H10P32/00; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/944; Y10S438/965
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-06-21 | 1974-12-21 | 1975-06-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-06-21 | 1978-12-21 | 1979-06-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-06-21 | 1982-12-21 | 1983-06-22 | $7700.00 | Window Closed / Lapsed |