Abstract Disclosed is a manufacturing method for semiconductor devices, which comprises the processes of: Forming at least one recess and at least one projecting portion on a surface of semiconductor substrate; applying coating material on the recess and the projecting portion in such a manner that the layer of the coating material in the recess is thicker than that on the projecting portion; providing a bared portion at the top of the projecting portion by removing the applied coated material on the silicon dioxide layer of the semiconductor substrate at a uniform removing rate; and diffusing impurities to form different conductivity region through the bared top portion. The highly advantageous results achieved through the use of this newly developed method are (1) the elimination of a process for the self alignment of mask, (2) the production of highly reliable semiconductor devices, and (3) an increase in the productivity of semiconductor devices.
The method of forming semiconductor devices comprising: forming at least one recess on a surface of a semiconductor substrate; applying an etchable coating material on said surface of the substrate in such manner that the layer in the recess is thicker than that on the projecting portion; etching the layer of said coating material uniformly at the same rate until such time as the projecting portion is bared, whereas the recess is still covered with the coating material and stopping the etching of said coating material after said time and before the coating material in the recess has been removed; forming one conductivity region in the projecting portion of said semiconductor substrate.
Claim 2
Independent Claim
112 words
The method of forming semiconductor devices comprising: forming at least one recess on a surface of a semiconductor substrate; applying an etchable coating material on said surface of the substrate in such manner that the layer in the recess is thicker than that on the projecting portion; etching the layer of said coating material uniformly at the same rate until such time as the projecting portion is bared, whereas the recess is still covered with the coating material and stopping the etching of said coating material after said time and before the coating material in the recess has been removed; forming one conductivity region in the projecting portion of said semiconductor substrate.
Claim 3
Dependent Claim
34 words
The method of forming semiconductor devices claimed in the claim 1 characterized in that said layer of said coating material is etched uniformly at the same rate in a low pressure oxygen glow-discharge environment.
Claim 4
Dependent Claim
24 words
The method of forming semiconductor devices claimed in the claim 1, characterized in that said active region is formed by an ion implantation method.
Claim 5
Dependent Claim
22 words
The method of forming semiconductor devices claimed in the claim 1, characterized in that said coating material is an acid resisting material.