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US4045310A
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Starting product for the production of a read-only memory and a method of producing it and the read-only memory
Assignee: AT&T Teletype Corp
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Filing: 1976-05-03
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Granted: 1977-08-30
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Expires: 1996-05-03
Abstract
Abstract A read-only memory is manufactured from a matrix or array of multilayer electrical devices, each of which includes at least one metallic layer, a portion of which contacts a doped semi conductor region. The metallic layers are controllably and rapidly thinned down and decreased in cross-sectional area in the vicinity of the doped regions to form fusible links, thus producing a ROM starting product. Fusible link formation is enhanced by the use of an etchant for the metallic layer which forms an electrochemical cell in conjunction therewith and with the semiconductor and the doped region. Any metallic layers not contacting a doped region are also etched by the etchant, but at the much slower "chemical rate". Following the production of the starting product, a ROM may be produced by the selective application of voltages to selected fusible links, the I 2 R heating of the links fusing them, or blowing them out. In a preferred embodiment, the electrical devices are MOSFETS.
Inventors
- 👤 Robert K. Jones
- 👤 Harry Sue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:11
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/065; G; G11; G11C; G11C17/00; G11C17/14; G11C17/16; H10P; H10P50/00; H10P50/60; H10P50/66; H10P50/663; H10P50/667; H10W20/40; H10W20/49; H10W20/493
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
103 words
A method of forming a ROM from a matrix of semiconductive devices which each include a plurality of electrodes, at least one of which electrodes in each device includes a metallic conductor in contact with a doped semiconductor region, wherein the method comprises: rapidly decreasing the cross-sectional area of selected ones of the conductors in contact with doped regions with an etchant which forms, with the conductor and the doped region, an electrochemcial cell; conductors not in contact with the doped regions etching at a slower, chemical rate; and then passing sufficient current through selected conductors to fuse the decreased cross-sectional area thereof.
Claim 2
Independent Claim
103 words
A method of forming a ROM from a matrix of semiconductive devices which each include a plurality of electrodes, at least one of which electrodes in each device includes a metallic conductor in contact with a doped semiconductor region, wherein the method comprises: rapidly decreasing the cross-sectional area of selected ones of the conductors in contact with doped regions with an etchant which forms, with the conductor and the doped region, an electrochemcial cell; conductors not in contact with the doped regions etching at a slower, chemical rate; and then passing sufficient current through selected conductors to fuse the decreased cross-sectional area thereof.
Claim 3
Dependent Claim
9 words
The ROM produced by the method of claim 1.
Claim 4
Dependent Claim
54 words
The method of claim 1, wherein the devices are MOSFETS coplanarly formed in a slice of the silicon, the slice being covered by a layer of SiO 2 after deposition of the aluminum conductors, wherein the method further comprises, etching windows in the SiO 2 layer to expose therethrough selected conductors in each device.
Claim 5
Dependent Claim
9 words
The ROM produced by the method of claim 3.
Claim 6
Dependent Claim
24 words
The method of claim 3 wherein the windows are etched with the same etchant as that which effects the decrease in conductor cross-sectional area.
Claim 7
Dependent Claim
28 words
The method of claim 5, wherein the semiconductor is silicon, the dopant is boron, the metal is deposited aluminum, the etchant is unbuffered HF and H 2 O.
Claim 8
Dependent Claim
9 words
The ROM produced by the method of claim 6.
Claim 9
Independent Claim
145 words
A method of forming a ROM from a plurality of coplanar MOS devices, the insulated gates of each of which are connected to a selected one of a plurality of column conductors, each device including a pair of controlled electrodes each in contact with a doped region of a semiconductor, one of the controlled electrodes of each device being connected to a selected one of a plurality of row conductors, the other controlled electrode being grounded, wherein the method comprises: rapidly decreasing the cross-sectional area of the controlled electrodes adjacent the doped regions by contacting the electrodes with an etchant which forms an electrochemical cell with the electrode and the doped semiconductor, portions of the electrodes not in contact with the doped regions etching at a slower, chemical rate; and then applying voltages to selected row and column conductors sufficient to blow selected controlled electrodes.
Claim 10
Independent Claim
145 words
A method of forming a ROM from a plurality of coplanar MOS devices, the insulated gates of each of which are connected to a selected one of a plurality of column conductors, each device including a pair of controlled electrodes each in contact with a doped region of a semiconductor, one of the controlled electrodes of each device being connected to a selected one of a plurality of row conductors, the other controlled electrode being grounded, wherein the method comprises: rapidly decreasing the cross-sectional area of the controlled electrodes adjacent the doped regions by contacting the electrodes with an etchant which forms an electrochemical cell with the electrode and the doped semiconductor, portions of the electrodes not in contact with the doped regions etching at a slower, chemical rate; and then applying voltages to selected row and column conductors sufficient to blow selected controlled electrodes.
Claim 11
Dependent Claim
9 words
The ROM produced by the method of claim 8.
Claim 12
Dependent Claim
76 words
An improved method of decreasing the cross-sectional area of selected conductors associated with doped semiconductor regions of an array of semiconductive devices, preparatory to blowing out predetermined ones of the selected cross-sectionally decreased conductors by I 2 R heating, wherein the improvement comprises: contacting the selected conductors and their associated doped regions with a first etchant which forms an electrochemical cell with the conductors and the regions, to rapidly etch and decrease the cross-sectional area thereof.
Claim 13
Dependent Claim
76 words
An improved method of decreasing the cross-sectional area of selected conductors associated with doped semiconductor regions of an array of semiconductive devices, preparatory to blowing out predetermined ones of the selected cross-sectionally decreased conductors by I 2 R heating, wherein the improvement comprises: contacting the selected conductors and their associated doped regions with a first etchant which forms an electrochemical cell with the conductors and the regions, to rapidly etch and decrease the cross-sectional area thereof.
Claim 14
Dependent Claim
9 words
The product produced by the method of claim 10.
Claim 15
Dependent Claim
38 words
The method of claim 10 wherein other conductors not associated with doped regions are also contacted with the etchant, the other conductors being etched at a chemical rate, slower than the rate of etching of the selected conductors.
Claim 16
Dependent Claim
27 words
The method of claim 10 wherein the conductors are aluminum, the doped semiconductor regions are boron-doped silicon, and the etchant is unbuffered HF and H 2 O.
Claim 17
Dependent Claim
41 words
The method of claim 10 wherein the array is covered with an insulating layer, which method further comprises etching the insulating layer with a second etchant to open windows therethrough to thereby expose the doped regions and their associated selected conductors.
Claim 18
Dependent Claim
38 words
The method of claim 14 wherein the conductors are aluminum, the doped semiconductor regions are boron-doped silicon, the insulating layer is SiO 2 , and the first and second etchant are both unbuffered HF and H 2 O.
Claim 19
Dependent Claim
9 words
The product produced by the method of claim 15.
Claim 20
Dependent Claim
32 words
A method of producing a ROM from the product of claim 16 comprising the step of blowing out predetermined ones of the selected cross-sectionally decreased conductors by the I 2 R heating.
Claim 21
Dependent Claim
25 words
The method of claim 15 wherein the contacting step immediately follows the etching step by the continuous application of unbuffered HF and H 2 O.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-08-29 | 1981-02-28 | 1981-08-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-08-29 | 1985-02-28 | 1985-08-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-08-29 | 1989-02-28 | 1989-08-30 | $7700.00 | Window Closed / Lapsed |