Power strobing to achieve a tri state

Claim 2

In combination with a random access memory array (RAM) having data in and data out lines and enabling means for reading/writing data in or data out of said RAM during one memory cycle of said RAM, said random access memory array (RAM) being comprised of first type memory elements whereby information is retained on said data-out lines for the duration of the memory cycle when an enabling signal on the enabling means is removed, and apparatus for uncoupling said data out lines of said RAM from a data bus comprising: a. first means, coupled to said data out lines and said data bus for disconnecting said data out lines from said data bus during the memory cycle of said RAM; b. second means, coupled to said first means, for providing power to said first means, said first means disconnecting said data out lines from said data bus only when power is provided by said second means to said first means; c. third means in said second means for controlling the power to said second means, said third means being comprised of at least two NPN transistors wherein the collector of one of said transistors is coupled to the base of the other of said transistors.

Claim 3

The combination as recited in claim 1 including gate means responsive to clock pulses for providing electric signals to said one of said transistors for causing said one of said transistors to become non-conductive.

Claim 4

The apparatus as recited in claim 2 including bias means coupled to the collector of said one transistor and to the emitter of said other transistor for providing bias to said first and second transistors.

Claim 5

The apparatus as recited in claim 3 including clock pulse means coupled to said one of said transistors for causing said one of said transistors to become non-conducting and for causing said other of said transistors to become conducting whereby power strobe is supplied to said third means thus causing said data-out lines to become disconnected from said bus.

Claim 6

In combination with a random access memory array (RAM) having data in and data out lines and enabling means coupled to said RAM for writing/reading data in or out of said RAM, said random access memory array being comprised of first type memory elements whereby information is retained on said data out lines when an enabling signal on said enabling means is removed, said random access memory array being further comprised of second type memory elements whereby information is not retained on said data out lines when the enabling signal on said enabling means is removed, an apparatus for coupling and uncoupling said data out lines on said RAM to or from a data bus comprising: a. first means, coupled to said data out lines of said first type memory elements and to said data bus for disconnecting said data out lines from said data bus after said enabling signal has been removed; and, b. second means, coupled to said first means for providing power to said first means and disconnecting said data out lines of said first type memory elements only when power is provided to said first means, the disconnecting of said data out lines of said first type memory elements from said data bus being effected by said first means providing a high impedance between said data out lines and said data bus.

Claim 7

In combination with a random access memory array (RAM) having data in and data out lines and enabling means coupled to said RAM for writing/reading data in or out of said RAM, said random access memory array being comprised of first type memory elements whereby information is retained on said data out lines when an enabling signal on said enabling means is removed, said random access memory array being further comprised of second type memory elements whereby information is not retained on said data out lines when the enabling signal on said enabling means is removed, an apparatus for coupling and uncoupling said data out lines on said RAM to or from a data bus comprising: a. first means, coupled to said data out lines of said first type memory elements and to said data bus for disconnecting said data out lines from said data bus after said enabling signal has been removed; and, b. second means, coupled to said first means for providing power to said first means and disconnecting said data out lines of said first type memory elements only when power is provided to said first means, the disconnecting of said data out lines of said first type memory elements from said data bus being effected by said first means providing a high impedance between said data out lines and said data bus.

Claim 8

The apparatus as recited in claim 5 including third means coupled to said second means for controlling the power to said second means.

Claim 9

The apparatus as recited in claim 6 wherein said third means is comprised of at least two transistors wherein the collector of a first of said transistors is coupled to the base of a second of said transistors.

Claim 10

The apparatus as recited in claim 7 including gate means responsive to clock pulses for providing electric signals to said first of said transistors for causing said first of said transistors to become non-conducting.

Claim 11

The apparatus as recited in claim 9 including bias means coupled to the collector of said first transistor and to the emitter of said second transistor for providing bias to said first and second transistors whereby power is supplied to said first means when a clock pulse is applied to said gate means.