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Method of etching materials including a major constituent of tin oxide

Assignee: General Electric Co
•
Filing: 1976-04-12
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Granted: 1977-08-09
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Expires: 1996-04-12
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Abstract

Abstract A method of etching a desired pattern in a layer of material including a major constituent of tin oxide is provided. A film of material which is resistant to the etching action of hot concentrated hydroiodic acid is formed on the layer and patterned. Portions of the layer uncovered by the patterned film are etched with hot concentrated hydroiodic acid.

Inventors

  • 👤 Paul L. Sargent
  • 👤 Mario Ghezzo

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 02:28
CPC Classifications
C; C09; C09K; C09K13/00; C09K13/04; G; G02; G02F; G02F1/00; G02F1/01; G02F1/0102; H; H10; H10F; H10F71/00; H10F71/138; H10P; H10P50/00; H10P50/60; H10P50/66; H10P50/663; H10P50/667; Y; Y02; Y02E; Y02E10/00; Y02E10/50

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 99 words
A method of etching a first pattern in a layer of a binary compound material including a major constituent of tin oxide and a minor constituent of antimony oxide on a substrate comprising depositing a film of material which is resistant to the etching action of hot concentrated hydroiodic acid over the exposed surface of said layer, forming in said film a second pattern which is substantially identical to said first pattern to expose portions of said layer of material uncovered thereby, etching said uncovered portions of said layer of material in a concentrated solution of hot hydroiodic acid.
Claim 2
Independent Claim 99 words
A method of etching a first pattern in a layer of a binary compound material including a major constituent of tin oxide and a minor constituent of antimony oxide on a substrate comprising depositing a film of material which is resistant to the etching action of hot concentrated hydroiodic acid over the exposed surface of said layer, forming in said film a second pattern which is substantially identical to said first pattern to expose portions of said layer of material uncovered thereby, etching said uncovered portions of said layer of material in a concentrated solution of hot hydroiodic acid.
Claim 3
Dependent Claim 23 words
The method of claim 1 in which the concentration of said solution of hot hydroiodic acid is at least 40 percent by weight.
Claim 4
Dependent Claim 21 words
The method of claim 2 in which the temperature of said hot hydroiodic acid is close to the boiling temperature thereof.
Claim 5
Dependent Claim 33 words
The method of claim 1 in which said layer is formed on said substrate by chemical vapor deposition from a gaseous mixture of a compound including tin, a compound including antimony, and oxygen.
Claim 6
Dependent Claim 30 words
The method of claim 4 in which chemical vapor deposition of said layer on said substrate is performed while said substrate is maintained at a temperature of about 500° C.
Claim 7
Dependent Claim 14 words
The method of claim 5 in which said compound of tin is tetramethyl tin.
Claim 8
Dependent Claim 14 words
The method of claim 6 in which said compound of antimony is antimony pentachloride.

References Cited (Backward Citations)

US2608980A Cited
US3160539A Cited
US3480491A Cited
US3497407A Cited
US3772102A Cited
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US3837944A Cited
US3979240A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1980-08-08 1981-02-07 1981-08-09 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1984-08-08 1985-02-07 1985-08-09 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1988-08-08 1989-02-07 1989-08-09 $7700.00 Window Closed / Lapsed

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