Multiple hybrid semiconductor structure

Claim 2

Multiple hybrid semiconductor structure comprising a power semiconductor element (10) and a driver or low-power semiconductor element (11) connected to drive said power element (10); an apertured base plate (13) to which said power semiconductor element (10) is secured to provide a heat sink and heat dissipating element therefore; a combination support carrier and electrical terminal (15) comprising a metallic rotation-symmetrical body (15, 15') passing through an aperture of the base plate on which the other of said elements (11) is secured; and an insulating seal (G 1 ) mechanically securing and electrically insulating the rotation symmetrical support carrier (15, 15') in, and with respect to the base plate (13) whereby said carrier (15, 15') will directly support the driver semiconductor element (11) and form a terminal post for the structure which is electrically separate from the base plate (13).

Claim 3

Structure according to claim 1, wherein (FIG. 4) the metallic rotation-symmetrical body comprises a headed wire (15).

Claim 4

Structure according to claim 1, wherein (FIG. 5) the metallic rotation-symmetrical body comprises a cylindrical element (15') having an essentially flat end surface.

Claim 5

Structure according to claim 1, wherein the power element (10) is attached to the base plate (13) of one side of the power element and terminal contacts (18, 19) are formed on the power element (10) at the side thereof remote from its attachment to the base plate (13); terminal posts (16, 17) are provided, leading through the base plate, mechanically secured thereto and electrically insulated therefrom; and bonding wires (23, 24, 25) connecting the terminal contacts and said terminal posts.

Claim 6

Structure according to claim 1, wherein at least one of the semiconductor elements comprises a monolithic integrated circuit (I 10 , I 11 ).

Claim 7

Structure according to claim 5, wherein the driven semiconductor element (11) comprises a monolithic integrated circuit which includes a control transistor (ST), a resistor (R 1 ) connected in parallel to the emitter-base junction of the control transistor, and a Zener diode (Z), the Zener diode having its anode connected to the base of the control transistor (ST); a terminal connection (14) connecting the semiconductor element (11) with the support carrier (15, 15'), said terminal element forming an electrically conductive connection between the semiconductor element (11) which forms the collector terminal of the control transistor (ST); and terminal connections (20, 21) located at the side of the semiconductor element remote from its connection to the support carrier, said terminal connections forming, respectively, the cathode connection (20) of the Zener diode (Z) and the emitter connection (21) of the control transistor (ST).

Claim 8

Structure according to claim 5, wherein the power semiconductor element (10) comprises a Darlington transistor circuit.

Claim 9

Structure according to claim 4, wherein the semiconductor elements comprise monolithic integrated circuits (I 10 , I 11 ), and the power element (10) comprises a Darlington transistor circuit.

Claim 10

Structure according to claim 6, wherein the power semiconductor element (10) comprises a Darlington transistor circuit.

Claim 11

Structure according to claim 5, wherein the power semiconductor element (10) comprises a Darlington transistor circuit; said Darlington transistor circuit including a driver transistor (TT) and a power transistor (LT), the collector of the power transistor (LT) being connected to the collector of the driver transistor (TT); the base of the power transistor (LT) being connected to the emitter of the driver transistor (TT); a resistor (R 3 ) connected in parallel to the emitter-base junction of the driver transistor (TT); a second resistor (R 2 ) being connected in parallel to the emitter-base junction of the power transistor (LT); a diode (D) being connected in parallel to the emitter-collector path of the power transistor (LT); both said driver and power transistors having a common collector terminal (12) formed by an electrically conductive attachment of the power element (10) to the base (13); and terminal connections (18, 19) on the side of the power element (10) remote from its connection to the base plate (13) and forming the base terminal of the driver transistor (TT) and the emitter connection of the power transistor (LT), respectively.