US4025941A
Expired / Lapsed
US
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Hall element
Assignee: Hitachi Ltd
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Filing: 1975-04-08
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Granted: 1977-05-24
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Expires: 1995-04-08
Abstract
Abstract A Hall element comprises a thin plate of n-type Si, the face of which accords with a {110} atomic plane, wherein the direction from one current electrode to the other current electrode is substantially <100> or <110> crystalline direction to which the direction from one Hall voltage electrode to the other Hall voltage electrode is substantially normal. This Hall element has a very low unbalanced voltage caused by the strain generated during the process of packaging.
Inventors
- 👤 Yozo Kanda
- 👤 Michiyoshi Maki
- 👤 Masatoshi Migitaka
- 👤 Kikuji Sato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:02
CPC Classifications
H; H10; H10N; H10N52/00; H10N52/101
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
172 words
A Hall element for reducing unbalanced voltages comprising a thin element of n-type Si having two parallel major surfaces, each of said major surfaces being substantially parallel to the {110} crystalline atomic plane, a pair of current electrodes for applying current across said thin Si element, said pair of current electrodes being separated across at least one of said major surfaces in a first direction within ±15° of one of the <100> and <110> crystalline directions, and a pair of Hall voltage electrodes for providing a Hall voltage output, said pair of voltage electrodes being separated across said major surface in a second direction substantially normal to said first direction, wherein said thin Si element is rectangular and has a first pair of side edges substantially parallel to said first direction and a second pair of side edges substantially perpendicular to said first direction, and wherein said current electrodes are arranged at said second pair of side edges and said Hall voltage electrodes are arranged at said first pair of side edges.
Claim 2
Dependent Claim
172 words
A Hall element for reducing unbalanced voltages comprising a thin element of n-type Si having two parallel major surfaces, each of said major surfaces being substantially parallel to the {110} crystalline atomic plane, a pair of current electrodes for applying current across said thin Si element, said pair of current electrodes being separated across at least one of said major surfaces in a first direction within ±15° of one of the <100> and <110> crystalline directions, and a pair of Hall voltage electrodes for providing a Hall voltage output, said pair of voltage electrodes being separated across said major surface in a second direction substantially normal to said first direction, wherein said thin Si element is rectangular and has a first pair of side edges substantially parallel to said first direction and a second pair of side edges substantially perpendicular to said first direction, and wherein said current electrodes are arranged at said second pair of side edges and said Hall voltage electrodes are arranged at said first pair of side edges.
Claim 3
Dependent Claim
19 words
A Hall element according to claim 1, wherein said first direction is within ±15° of the <100> crystalline direction.
Claim 4
Dependent Claim
33 words
A Hall element according to claim 2, wherein said thin Si element is provided on a pellet together with at least one of active elements and passive elements, and said pellet is packaged.
Claim 5
Dependent Claim
18 words
A Hall element according to claim 2, wherein said first direction is substantially in the <100> crystalline direction.
Claim 6
Dependent Claim
33 words
A Hall element according to claim 4, wherein said thin Si element is provided on a pellet together with at least one of active elements and passive elements, and said pellet is packaged.
Claim 7
Dependent Claim
19 words
A Hall element according to claim 1, wherein said first direction is within ±15° of the <110> crystalline direction.
Claim 8
Dependent Claim
33 words
A Hall element according to claim 6, wherein said thin Si element is provided on a pellet together with at least one of active elements and passive elements, and said pellet is packaged.
Claim 9
Dependent Claim
18 words
A Hall element according to claim 6, wherein said first direction is substantially in the <110> crystalline direction.
Claim 10
Dependent Claim
33 words
A Hall element according to claim 8, wherein said thin Si element is provided on a pellet together with at least one of active elements and passive elements, and said pellet is packaged.
Claim 11
Dependent Claim
33 words
A Hall element according to claim 1, wherein said thin Si element is a rectangular plate, and wherein said current electrodes and said Hall voltage electrodes are in ohmic contact with said element.
Claim 12
Dependent Claim
28 words
A Hall element according to claim 1, wherein said thin Si element is provided on a pellet together with at least one of active elements and passive elements.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-05-23 | 1980-11-22 | 1981-05-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-05-23 | 1984-11-22 | 1985-05-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-05-23 | 1988-11-22 | 1989-05-24 | $7700.00 | Window Closed / Lapsed |