Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
154 words
A semiconductor light emitting diode with reduced light emission divergence comprising: a body of single crystalline semiconductor material having a first region of one conductivity type, a second region of a conductivity type opposite to that of said first region and a third region between and contiguous to said first and second regions, the junctions between the third region and each of the first and second regions being heterojunctions, with the index of refraction of each of the first and second regions being at least 3% less than the index of refraction of said third region at the peak emission wavelength of said third region, each of said first and second regions having an energy band gap greater than that of said third region with the difference in the energy band gap being greater than 0.1 eV and said third region having a thickness, between each of said heterojunctions, of less than 0.125 microns.
Claim 2
Dependent Claim
154 words
A semiconductor light emitting diode with reduced light emission divergence comprising: a body of single crystalline semiconductor material having a first region of one conductivity type, a second region of a conductivity type opposite to that of said first region and a third region between and contiguous to said first and second regions, the junctions between the third region and each of the first and second regions being heterojunctions, with the index of refraction of each of the first and second regions being at least 3% less than the index of refraction of said third region at the peak emission wavelength of said third region, each of said first and second regions having an energy band gap greater than that of said third region with the difference in the energy band gap being greater than 0.1 eV and said third region having a thickness, between each of said heterojunctions, of less than 0.125 microns.
Claim 3
Dependent Claim
26 words
The semiconductor light emitting diode in accordance with claim 1 wherein said third region is of the conductivity type of either said first or second regions.
Claim 4
Dependent Claim
30 words
The semiconductor light emitting diode in accordance with claim 2 wherein said first region is of N type conductivity and said second and third regions are of P type conductivity.
Claim 5
Dependent Claim
32 words
The semiconductor light emitting diode in accordance with claim 2 wherein said first region and second region are of Al x Ga 1 -x As and said third region is of GaAs.
Claim 6
Dependent Claim
20 words
The semiconductor light emitting diode in accordance with claim 4 wherein the aluminum concentration x is about 0.1 or more.
Claim 7
Dependent Claim
32 words
The semiconductor light emitting diode in accordance with claim 3 wherein said body further comprises a substrate such that said first region is in intimate contact with a surface of said substrate.
Claim 8
Dependent Claim
20 words
the semiconductor light emitting diode in accordance with claim 6 wherein said substrate is gallium arsenide of N type conductivity.
Claim 9
Dependent Claim
44 words
The semiconductor laser in accordance with claim 1 wherein said third region comprises a first layer of one conductivity type on a surface of said first region and a second layer of the opposite conductivity on said first layer with a P-N junction therebetween.