Patent US4021836A successfully refreshed from Google Patents.
US4021836A
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Inverted heterojunction photodiode
Assignee: United States Department of the Air Force
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Filing: 1976-04-12
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Granted: 1977-05-03
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Expires: 1996-04-12
Abstract
Abstract An inverted heterojunction photodiode for use as a laser detector sensitive to the 8 - 14 μm portion of the infrared spectrum and operable above 77° K. The diode structure comprises a PbTe substrate, a first buffer layer of a Pb.sub..90 Sn.sub..10 Te material on said substrate and a second active layer of a Pb.sub..80 Sn.sub..20 Te material on said buffer layer. The first and second layers are grown by liquid phase epitaxy.
Inventors
- 👤 II Austin M. Andrews
- 👤 John E. Clarke
- 👤 Edward R. Gertner
- 👤 Joseph T. Longo
- 👤 Richard C. Eden
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 15:25
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H10F39/184; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/222; H10F77/00; H10F77/10; H10F77/14; H10F77/147; H10W; H10W72/00; H10W72/50; H10W72/531; H10W72/536; H10W72/551; H10W72/552; H10W72/5522; H10W72/851; H10W72/874; H10W72/884; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S148/00; Y10S148/064; Y10S148/115; Y10S148/135
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
61 words
An inverted heterojunction photodiode particularly adapted to operate as a detector for 10.6 μm laser applications comprising (A) a transparent substrate composed of a PbTe mixed crystalline material; (B) a first epitaxially grown buffer layer of a Pb.sub..90 Sn.sub..10 Te crystalline material interdisposed between said substrate; and (C) a second epitaxially grown active layer of a Pb.sub..80 Sn.sub..20 Te crystalline material.
Claim 2
Dependent Claim
61 words
An inverted heterojunction photodiode particularly adapted to operate as a detector for 10.6 μm laser applications comprising (A) a transparent substrate composed of a PbTe mixed crystalline material; (B) a first epitaxially grown buffer layer of a Pb.sub..90 Sn.sub..10 Te crystalline material interdisposed between said substrate; and (C) a second epitaxially grown active layer of a Pb.sub..80 Sn.sub..20 Te crystalline material.
References Cited (Backward Citations)
US3911469A
Cited
US3961998A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-05-02 | 1980-11-01 | 1981-05-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-05-02 | 1984-11-01 | 1985-05-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-05-02 | 1988-11-01 | 1989-05-03 | $7700.00 | Window Closed / Lapsed |