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Patent US4017880A successfully refreshed from Google Patents.
US4017880A
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Red light emitting gallium phosphide device
Assignee: Toshiba Corp
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Filing: 1975-07-25
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Granted: 1977-04-12
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Expires: 1995-07-25
Abstract
Abstract A red light emitting gallium phosphide device comprises an n-type substrate, an n-type layer formed on the substrate using a liquid phase epitaxial growth method, and a p-type layer formed on the n-type layer using the liquid phase epitaxial growth method, the donor concentration of the n-type layer ranging from 1.8 × 10 17 cm.sup. -3 to 5.8 × 10 17 cm.sup. -3 .
Inventors
- 👤 Akinobu Kasami
- 👤 Masaru Kawachi
- 👤 Hiroki Mineo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 19:34
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/8242
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
100 words
A red light emitting gallium phosphide device comprising an n-type gallium phosphide substrate, an n-type gallium phosphide layer formed on said substrate and a p-type gallium phosphide layer formed on said n-type layer to define a pn-junction contributing to emission of a red light between both layers, wherein the n-type layer has doped oxygen having a concentration of less than 1 × 10 14 cm - 3 , the portion of the n-type layer adjacent the pn-junction having a net donor concentration of from 1 × 10 17 cm - 3 to 5.8 × 10 17 cm - 3 .
Claim 2
Dependent Claim
100 words
A red light emitting gallium phosphide device comprising an n-type gallium phosphide substrate, an n-type gallium phosphide layer formed on said substrate and a p-type gallium phosphide layer formed on said n-type layer to define a pn-junction contributing to emission of a red light between both layers, wherein the n-type layer has doped oxygen having a concentration of less than 1 × 10 14 cm - 3 , the portion of the n-type layer adjacent the pn-junction having a net donor concentration of from 1 × 10 17 cm - 3 to 5.8 × 10 17 cm - 3 .
Claim 3
Dependent Claim
28 words
A red light emitting gallium phosphide device according to claim 1, wherein the p-type layer has doped zinc and oxygen, and the n-type layer additionally contains tellurium therein.
Claim 4
Dependent Claim
27 words
A red light emitting gallium phosphide device according to claim 1 wherein the concentration of oxygen is less than 5 × 10 13 cm - 3 .
Claim 5
Dependent Claim
34 words
A red light emitting gallium phosphide device according to claim 1 wherein the n-type substrate has a doped donor impurity having a concentration of less than 5 × 10 17 cm - 3 .
Claim 6
Dependent Claim
39 words
A red light emitting gallium phosphide device according to claim 1 wherein the n-type substrate is a liquid-encapsulated Czochralski substrate, the n-type layer is a liquid phase epitaxial layer and the p-type layer is a liquid phase epitaxial layer.
Claim 7
Dependent Claim
81 words
A red light emitting gallium phosphide device according to claim 5 wherein the substrate has doped therein a donor impurity having a concentration of less than 5 × 10 17 cm - 3 , the n-type layer has a donor impurity having a concentration ranging from 1.8 × 10 17 cm - 3 to 5.8 × 10 17 cm - 3 , and the p-type layer has an acceptor concentration lower than that of the donor concentration in the n-type layer.
References Cited (Backward Citations)
US3703671A
Cited
US3934260A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-04-11 | 1980-10-11 | 1981-04-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-04-11 | 1984-10-11 | 1985-04-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-04-11 | 1988-10-11 | 1989-04-12 | $7700.00 | Window Closed / Lapsed |