Patent US4011578A successfully refreshed from Google Patents.
US4011578A
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Photodiode
Assignee: US Philips Corp
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Filing: 1975-06-05
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Granted: 1977-03-08
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Expires: 1995-06-05
Abstract
Abstract The invention relates to a photodiode having a semiconductor body comprising regions of opposite conductivity types which are separated by a p-n junction and of which at least one region has an anti-reflective layer. The anti-reflective layer consists of tin-doped indium oxide and forms an ohmic connection with the one region.
Inventors
- 👤 Lambertus Jacobus Maria Bollen
- 👤 Cornelus Petrus Theodorus Maria Damen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 21:30
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/30; H10F77/306; H10W; H10W72/00; H10W72/50; H10W72/531; H10W72/536; H10W72/551; H10W72/552; H10W72/5522
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
77 words
A photodiode, comprising: (a) a semiconductor body having regions of opposite conductivity types which are separated by a p-n junction, (b) an anti-reflective layer at, at least one region said anti-reflective layer consisting essentially of tin-doped indium oxide and forming an ohmic connection with said one region, (c) a metallic contact element disposed over said anti-reflective layer and electrically connected therewith, and, (d) a bismuth oxide layer disposed between said antireflective layer and said metallic contact element.
Claim 2
Dependent Claim
77 words
A photodiode, comprising: (a) a semiconductor body having regions of opposite conductivity types which are separated by a p-n junction, (b) an anti-reflective layer at, at least one region said anti-reflective layer consisting essentially of tin-doped indium oxide and forming an ohmic connection with said one region, (c) a metallic contact element disposed over said anti-reflective layer and electrically connected therewith, and, (d) a bismuth oxide layer disposed between said antireflective layer and said metallic contact element.
Claim 3
Dependent Claim
29 words
A photodiode as in claim 1, wherein the tin content of said indium oxide layer, expressed in the weight ratio of tin to indium, is between 0.01 and 0.05.
Claim 4
Dependent Claim
15 words
A photodiode as in claim 2, wherein said tin content is between 0.015 and 0.035.
Claim 5
Dependent Claim
18 words
A photodiode as in claim 1, wherein said bismuth oxide layer has a thickness less than 500 A.
Claim 6
Dependent Claim
24 words
A photodiode as in claim 1, wherein said metallic contact element is of gold and is attached to said bismuth oxide layer by thermocompression.
Claim 7
Dependent Claim
21 words
A method of manufacturing a photodiode as in claim 1, wherein said one region is formed by ion implantation or epitaxy.
Claim 8
Dependent Claim
34 words
A method of manufacturing a photodiode as in claim 1, wherein said indium oxide layer is vapor deposited on said one region from separate indium sources and tin sources under a reduced oxygen pressure.
Claim 9
Dependent Claim
27 words
A method as in claim 7, wherein said indium oxide layer is provided with a bismuth oxide layer which is contacted with a gold wire by thermocompression.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-03-07 | 1980-09-06 | 1981-03-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-03-07 | 1984-09-06 | 1985-03-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-03-07 | 1988-09-06 | 1989-03-08 | $7700.00 | Window Closed / Lapsed |