Patent US4009481A successfully refreshed from Google Patents.
US4009481A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metal semiconductor diode
Assignee: Siemens AG
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Filing: 1972-08-16
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Granted: 1977-02-22
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Expires: 1992-08-16
Abstract
Abstract A metal semiconductor diode with a first insulating layer, arranged on a semiconductor body and provided with a first contact window, a second insulating layer, which is thinner than the first insulating layer, has a second contact window which is smaller than the first contact window. The second insulating layer covers the edge of the surface of the semiconductor body which emerges through the first contact window and contact metal is provided in the first and in the second contact window.
Inventors
- 👤 Klaus Reindl
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:12
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/60; H10P; H10P95/00; H10W; H10W20/00; H10W20/40; H10W74/00; H10W74/40
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
124 words
A metal semiconductor diode with a silicon dioxide insulating layer, arranged on a semiconductor body and provided with a first contact window, a silicon nitride insulating layer which is thinner than the silicon dioxide insulating layer on said silicon dioxide insulating layer, said silicon nitride insulating layer having therein a second contact window which is 10 to 30 μm smaller than the first contact window, so that said silicon nitride insulating layer covers the edge of the surface of the semiconductor body which emerges through the first contact window and contact metal is provided in the first and in the second contact windows, said silicon dioxide layer being 0.4 to 0.8 μm thick and said silicon nitride layer being 100 - 500 A thick.
Claim 2
Dependent Claim
124 words
A metal semiconductor diode with a silicon dioxide insulating layer, arranged on a semiconductor body and provided with a first contact window, a silicon nitride insulating layer which is thinner than the silicon dioxide insulating layer on said silicon dioxide insulating layer, said silicon nitride insulating layer having therein a second contact window which is 10 to 30 μm smaller than the first contact window, so that said silicon nitride insulating layer covers the edge of the surface of the semiconductor body which emerges through the first contact window and contact metal is provided in the first and in the second contact windows, said silicon dioxide layer being 0.4 to 0.8 μm thick and said silicon nitride layer being 100 - 500 A thick.
Claim 3
Dependent Claim
14 words
The diode of claim 1, wherein the silicon nitride layer is 200 A thick.
References Cited (Backward Citations)
US3405329A
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US3388000A
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US3597667A
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US3476984A
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US3585496A
Cited
US3599054A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-02-22 | 1980-08-23 | 1981-02-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-02-22 | 1984-08-23 | 1985-02-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-02-22 | 1988-08-23 | 1989-02-22 | $7700.00 | Window Closed / Lapsed |