Balanced regenerative charge detection circuit for semiconductor charge transfer devices

Claim 2

Semiconductor apparatus which comprises a. a main charge transfer device section containing a first plurality of transfer stages for providing an output stream of essentially binary level charge packet bits, each such charge packet arriving at a first output terminal of said main charge transfer device section; b. an auxiliary charge transfer device section, containing a second plurality of tranfer stages that is substantially less than the first plurality, for providing an output stream of unilevel charge packet bits to a second output terminal, each and every said unilevel charge packet being substantially midway in charge level between the output levels of the binary charge packet bits; c. amplifying means coupled to receive outputs from the first and second output terminals for delivering to a third output terminal a signal stream characterized in that said stream is at a first level corresponding to a charge packet arriving at the first terminal greater than the charge packet arriving simultaneously at the second terminal and is at a second level corresponding to a charge packet arriving at the first terminal less than the charge packet arriving simultaneously at the second terminal; said amplifying means including a flip-flop amplifier fed by a pair of preamplifiers, each said preamplifier having a first insulated gate field effect transistor whose gate electrode is connected to a different one of the first and second output terminals of the said charge transfer device sections.

Claim 3

Apparatus according to claim 1 in which the first transistor in each preamplifier has its source region connected to the drain region of a separate second transistor in each preamplifier, and in which the gate electrodes of the second transistors in both preamplifiers are connected together at a common terminal to the drain regions of both first transistors in both preamplifiers.

Claim 4

Apparatus according to claim 2 in which the source region of the second transistor in the second preamplifier is connected to a second input terminal of the flip-flop amplifier and in which the source region of the second transistor in the first preamplifier is connected to the first input terminal of the flip-flop amplifier.

Claim 5

Apparatus according to claim 3 which further comprises periodically pulsed voltage means applied to the common terminal for periodically enabling the drain regions of the second transistors in the first and second preamplifiers respectively to collect charges from both the gate and the source regions of the respective first transistors in accordance with the respective charge packets then at the first and second output terminals, respectively, of the main and auxiliary charge transfer devices, thereby depleting the gate regions of each said first transistors to a surface potential level in accordance with the said respective charge packets and establishing a voltage potential at each of the source regions of the second transistor in each of the respective preamplifiers in accordance with said respective charge packets.

Claim 6

Semiconductor apparatus which comprises a. a first semiconductor charge coupled device section of a first plurality of transfer stages for producing an output signal stream of charge packets varying from a minimum level to a maximum level for representing a binary input stream of information; b. a second semiconductor charge coupled device section for producing an output signal stream of charge packets each substantially of a level midway between said maximum and minimum levels, said second section being integrated in a single crystal silicon semiconductor substrate containing the first section, said second section containing a second plurality of many fewer transfer stages than that of the first plurality; c. flip-flop amplifying means; and d. preamplifying means coupled to receive the outputs of the first and second charge coupled device sections for delivering amplified electrical representatives of the outputs of the first and second charge coupled device sections to the flip-flop amplifying means, said preamplifying means comprising a pair of branches each branch having a first and a second insulated gate field effect transistor, the gate electrode of the first transistor in one of the branches being connected to an output diode which receives the output stream of the first charge coupled device section and the gate electrode of the first transistor in the second branch being connected to another output diode which receives the output stream of the second charge coupled device section, and means for periodically electrically isolating the said flip-flop means from the preamplifying means when the flip-flop is being latched periodically, whereby during operation said flip-flop amplifying means senses the difference between the signal stream outputs of the first and second charge coupled device sections such that one output terminal of the flip-flop amplifying means goes to an essentially ground potential in response to the output signals from the first and second charge coupled device sections when the output signal from the first section is greater than that of the second section while another terminal of the flip-flop means simultaneously goes to a voltage potential significantly different from ground, said other output terminal of the flip-flop amplifying means going to essentially ground potential when the signal output of the second section is greater than that of the first section and the one terminal of the flip-flop simultaneously going to a potential significantly different from ground.

Claim 7

Semiconductor apparatus which comprises a. a first semiconductor charge coupled device section of a first plurality of transfer stages for producing an output signal stream of charge packets varying from a minimum level to a maximum level for representing a binary input stream of information; b. a second semiconductor charge coupled device section for producing an output signal stream of charge packets each substantially of a level midway between said maximum and minimum levels, said second section being integrated in a single crystal silicon semiconductor substrate containing the first section, said second section containing a second plurality of many fewer transfer stages than that of the first plurality; c. flip-flop amplifying means; and d. preamplifying means coupled to receive the outputs of the first and second charge coupled device sections for delivering amplified electrical representatives of the outputs of the first and second charge coupled device sections to the flip-flop amplifying means, said preamplifying means comprising a pair of branches each branch having a first and a second insulated gate field effect transistor, the gate electrode of the first transistor in one of the branches being connected to an output diode which receives the output stream of the first charge coupled device section and the gate electrode of the first transistor in the second branch being connected to another output diode which receives the output stream of the second charge coupled device section, and means for periodically electrically isolating the said flip-flop means from the preamplifying means when the flip-flop is being latched periodically, whereby during operation said flip-flop amplifying means senses the difference between the signal stream outputs of the first and second charge coupled device sections such that one output terminal of the flip-flop amplifying means goes to an essentially ground potential in response to the output signals from the first and second charge coupled device sections when the output signal from the first section is greater than that of the second section while another terminal of the flip-flop means simultaneously goes to a voltage potential significantly different from ground, said other output terminal of the flip-flop amplifying means going to essentially ground potential when the signal output of the second section is greater than that of the first section and the one terminal of the flip-flop simultaneously going to a potential significantly different from ground.

Claim 8

Apparatus according to claim 5 in which the semiconductor substrate is monocrystalline silicon.

Claim 9

Semiconductor apparatus according to claim 5 in which the drain of the second transistor in each branch is connected to the source of the first transistor of that branch, the gate electrode of the second transistor in each branch being connected to the drain of the first transistor of the same branch and the source of the second transistor in each branch being connected to a different input terminal of the flip-flop amplifying means.

Claim 10

Semiconductor apparatus according to claim 7 in which the first and second semiconductor charge coupled device sections and the first and second transistors in both branches of the preamplifier are all integrated in a single monocrystalline silicon semiconductor substrate.