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US4004286A
Expired / Lapsed
US
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Programmable random access memory (PRAM) integrated circuit memory device
Assignee: National Semiconductor Corp
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Filing: 1975-01-17
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Granted: 1977-01-18
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Expires: 1995-01-17
Abstract
Abstract A novel integrated circuit memory cell structure where the individual cells in the storage matrix may be utilized as either a RAM type storage cell or a ROM type storage cell; this selective type storage cell is referred to as a programmable random access (PRAM). Each individual cell of the matrix comprises a write transistor, a read transistor, a RAM storage transistor, and a ROM floating gate storage transistor. Several different circuit arrangements for these four different transistors are shown in different embodiments of the invention.
Inventors
- 👤 Dale A. Mrazek
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 12:56
CPC Classifications
G; G11; G11C; G11C14/00; G11C11/00; G11C11/005; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/403; G11C11/405
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
269 words
An integrated circuit memory structure comprising a plurality of memory cells, each cell having an input and an output, and a sense amplifier having an output coupled to the input of said cells and an input coupled to the output of said cells, each cell comprising, in combination, a write select transistor having a gate coupled to a write select input, a source coupled to the input of said cell, and a drain, a read select transistor having a gate coupled to a read select input, a source, and a drain coupled to the output of said cell, a random access memory transistor having a gate coupled to the drain of said write select transistor, a source coupled to a source of potential, and a drain coupled to the source of said read select transistor, a read only memory transistor having a floating gate, a source, and a drain, means coupling said source and said drain of said read only memory transistor to said random access memory transistor to control conduction in said random access memory transistor in response to the state of charge of said floating gate in said read only memory transistor wherein said coupling means includes means for coupling the drain of said random access memory transistor to the drain of sid read only memory transistor and for coupling the source of said random access memory transistor to the source of said read only memory transistor and pulse power source means coupled to said cell to charge said floating gate in response to the state of conduction in said read select and said write select transistors.
Claim 2
Dependent Claim
269 words
An integrated circuit memory structure comprising a plurality of memory cells, each cell having an input and an output, and a sense amplifier having an output coupled to the input of said cells and an input coupled to the output of said cells, each cell comprising, in combination, a write select transistor having a gate coupled to a write select input, a source coupled to the input of said cell, and a drain, a read select transistor having a gate coupled to a read select input, a source, and a drain coupled to the output of said cell, a random access memory transistor having a gate coupled to the drain of said write select transistor, a source coupled to a source of potential, and a drain coupled to the source of said read select transistor, a read only memory transistor having a floating gate, a source, and a drain, means coupling said source and said drain of said read only memory transistor to said random access memory transistor to control conduction in said random access memory transistor in response to the state of charge of said floating gate in said read only memory transistor wherein said coupling means includes means for coupling the drain of said random access memory transistor to the drain of sid read only memory transistor and for coupling the source of said random access memory transistor to the source of said read only memory transistor and pulse power source means coupled to said cell to charge said floating gate in response to the state of conduction in said read select and said write select transistors.
Claim 3
Dependent Claim
133 words
An integrated circuit memory cell structure comprising: a write select transistor having a gate for coupling to a write select input, a source for coupling to the input of said cell, and a drain, a read select transistor having a gate coupling to a read select input, a source, and a drain for coupling to the output of said cell, a random access memory transistor having a gate coupled to the drain of said write select transistor, a source for coupling to a source of potential, and a drain coupled to the source of said read select transistor, and a read only memory transistor having a floating gate, a source coupled to the source of said random access memory transistor, and a drain coupled to the drain of said random access memory transistor.
Claim 4
Dependent Claim
133 words
An integrated circuit memory cell structure comprising: a write select transistor having a gate for coupling to a write select input, a source for coupling to the input of said cell, and a drain, a read select transistor having a gate coupling to a read select input, a source, and a drain for coupling to the output of said cell, a random access memory transistor having a gate coupled to the drain of said write select transistor, a source for coupling to a source of potential, and a drain coupled to the source of said read select transistor, and a read only memory transistor having a floating gate, a source coupled to the source of said random access memory transistor, and a drain coupled to the drain of said random access memory transistor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-01-18 | 1980-07-19 | 1981-01-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-01-18 | 1984-07-19 | 1985-01-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-01-18 | 1988-07-19 | 1989-01-18 | $7700.00 | Window Closed / Lapsed |