US4004148A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Accumulation mode charge injection infrared sensor
Assignee: General Electric Co
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Filing: 1976-02-02
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Granted: 1977-01-18
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Expires: 1996-02-02
Abstract
Abstract The present invention relates to an accumulation mode charge injection device utilizing the extrinsic photoconductivity of a doped semiconductor material to sense infrared radiation. The device is operated at cryostatic temperatures to preclude thermal ionization of the impurity sites and majority carriers are produced by IR photons interacting with these sites. The device utilizes a metal-oxide-semiconductor structure to accumulate the IR photon induced majority carriers at the semiconductor oxide interface under a first bias condition. When the bias is reversed the accumulated charges are injected into an output electrode. The sensor may be used singly or in arrays of similar sensors.
Inventors
- 👤 Philip E. Howard
- 👤 James C. Kim
- 👤 Hans G. Sippach
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 07:29
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/154; H10F30/00; H10F30/20; H10F30/21; H10F30/28; H10F30/2823; H10F39/157; H10F77/00; H10F77/30; H10F77/306; H10F77/311; H10F77/315; H10F77/60; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
121 words
An infrared radiation sensor comprising: a. a semiconductor substrate of doped semiconductor material upon which IR illumination impinges creating mobile majority carriers and immobile sites of opposite charge, b. a thin insulating layer applied to one surface of said substrate, c. a first electrical contact applied to said insulating layer, d. a second electrical contact to said substrate, e. cryogenic means for establishing said semiconductor at a temperature providing inadequate thermal energy to ionize the dopant centers, and f. a source of bidirectional pulses coupled to said contacts having a first polarity for accumulating said mobile photon induced majority carriers at the oxide-semiconductor interface and a reverse polarity for injecting charges stored at the oxide-semiconductor interface into said second electrical contact.
Claim 2
Dependent Claim
121 words
An infrared radiation sensor comprising: a. a semiconductor substrate of doped semiconductor material upon which IR illumination impinges creating mobile majority carriers and immobile sites of opposite charge, b. a thin insulating layer applied to one surface of said substrate, c. a first electrical contact applied to said insulating layer, d. a second electrical contact to said substrate, e. cryogenic means for establishing said semiconductor at a temperature providing inadequate thermal energy to ionize the dopant centers, and f. a source of bidirectional pulses coupled to said contacts having a first polarity for accumulating said mobile photon induced majority carriers at the oxide-semiconductor interface and a reverse polarity for injecting charges stored at the oxide-semiconductor interface into said second electrical contact.
Claim 3
Dependent Claim
20 words
The combination set forth in claim 1 wherein said semiconductor material is N type, and said majority carriers are electrons.
Claim 4
Dependent Claim
37 words
The combination as set forth in claim 2, wherein said second contact is applied to the surface of said substrate opposite said first contact, and is transparent to permit the entrance of IR illumination into said substrate.
Claim 5
Dependent Claim
43 words
The combination as set forth in claim 3, having in addition thereto a third contact, in ohmic contact with said substrate and applied to the same surface of said substrate as said first contact to which accumulated charges are injected for IR sensing.
Claim 6
Dependent Claim
33 words
The combination as set forth in claim 4 for use as a cell in an array of like cells wherein said third contact bounds said second contact to preclude interaction between adjacent cells.
Claim 7
Dependent Claim
58 words
The combination as set forth in claim 5 for use as a cell in an area array of like cells, and wherein said first electrical contact on said insulating layer is associated with row selection of the cell and having in addition thereto a second electrical contact on said insulating layer associated with column selection of the cell.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-01-18 | 1980-07-19 | 1981-01-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-01-18 | 1984-07-19 | 1985-01-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-01-18 | 1988-07-19 | 1989-01-18 | $7700.00 | Window Closed / Lapsed |