US3864722A
Expired / Lapsed
US
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Radiation sensing arrays
Assignee: RCA Corp
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Filing: 1973-05-02
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Granted: 1975-02-04
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Expires: 1993-05-02
Abstract
Abstract A radiation sensing array includes two semiconductor layers of different conductivity types with a large area semiconductor junction therebetween. One of the layers is relatively thin and a substantially transparent metal layer located on the radiation receiving surface thereof forms a Schottky barrier therewith. Surface charge accumulation electrodes are coupled to the opposite surface of the body. The carriers generated at the Schottky barrier in response to a radiation image projected thereon travel through the junction and second layer and accumulate at the surface of the second layer as minoritycarrier, surface-charge signals.
Inventors
- 👤 James Edward Carnes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 15:37
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/157; H10D; H10D84/00; H10D84/891
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
164 words
A radiation sensing array comprising, in combination: a semiconductor substrate having a radiation receiving surface and an opposite surface and comprising a relatively thin semiconductor region of one conductivity type adjacent to said radiation receiving surface forming a junction with a relatively thicker semiconductor region of different conductivity type located between said junction and said opposite surface; a relatively transparent, relatively thin metal film on said radiation receiving surface and forming a Schottky barrier therewith; a plurality of electrode means at said opposite surface for creating surface potentials thereat for the accumulation, at a plurality of locations, of minority charge carriers; and means for reverse biasing said Schottky barrier at a level sufficient to deplete both semiconductor layers, whereby when radiation excitation is applied to said metal film, photoexcited majority charge carriers pass through said relatively thin semiconductor region and junction and appear as minority carriers in the relatively thicker semiconductor region, which may be collected as surface charge signals at said opposite surface.
Claim 2
Dependent Claim
164 words
A radiation sensing array comprising, in combination: a semiconductor substrate having a radiation receiving surface and an opposite surface and comprising a relatively thin semiconductor region of one conductivity type adjacent to said radiation receiving surface forming a junction with a relatively thicker semiconductor region of different conductivity type located between said junction and said opposite surface; a relatively transparent, relatively thin metal film on said radiation receiving surface and forming a Schottky barrier therewith; a plurality of electrode means at said opposite surface for creating surface potentials thereat for the accumulation, at a plurality of locations, of minority charge carriers; and means for reverse biasing said Schottky barrier at a level sufficient to deplete both semiconductor layers, whereby when radiation excitation is applied to said metal film, photoexcited majority charge carriers pass through said relatively thin semiconductor region and junction and appear as minority carriers in the relatively thicker semiconductor region, which may be collected as surface charge signals at said opposite surface.
Claim 3
Dependent Claim
19 words
An array as set forth in claim 1 wherein said plurality of electrode means comprises a chargecoupled shift register.
Claim 4
Dependent Claim
40 words
An array as set forth in claim 1, further including: charge-coupled shift register means; and means for shifting a portion of any charge signals which are collected in response to radiation excitation into the stages of said shift register means.
Claim 5
Dependent Claim
35 words
An array as set forth in claim 1 wherein said means for shifting comprises means for shifting only that portion of any charge signal which is collected which is of greater than a given amplitude.
Claim 6
Dependent Claim
134 words
A radiation sensing array comprising, in combination: a semiconductor substrate having a radiation receiving surface and an opposite surface and comprising a relatively thin semiconductor region of one conductivity type adjacent to said radiation receiving surface forming a junction with a relatively thicker semiconductor region of different conductivity type located between said junction and said opposite surface; a relatively transparent, relatively thin metal film on said radiation receiving surface and forming a Schottky barrier therewith; means for quiescently biasing said metal film at a level to deplete both regions of said substrate; and means at said opposite surface for creating a plurality of potential wells at said surface, each for the collection of a surface charge signal produced in response to radiation excitation reaching the portion of the metal film and opposite said well.
Claim 7
Dependent Claim
134 words
A radiation sensing array comprising, in combination: a semiconductor substrate having a radiation receiving surface and an opposite surface and comprising a relatively thin semiconductor region of one conductivity type adjacent to said radiation receiving surface forming a junction with a relatively thicker semiconductor region of different conductivity type located between said junction and said opposite surface; a relatively transparent, relatively thin metal film on said radiation receiving surface and forming a Schottky barrier therewith; means for quiescently biasing said metal film at a level to deplete both regions of said substrate; and means at said opposite surface for creating a plurality of potential wells at said surface, each for the collection of a surface charge signal produced in response to radiation excitation reaching the portion of the metal film and opposite said well.
Claim 8
Dependent Claim
38 words
A radiation sensing array as set forth in claim 5 wherein said means for creating a plurality of potential wells comprises a plurality of electrodes, each insulated from and electrically coupled to saId opposite surface of said substrate.
Claim 9
Dependent Claim
30 words
A radiation sensing array as set forth in claim 6 wherein said plurality of electrodes are located one adjacent to another and form the stages of a charge-coupled shift register.
Claim 10
Dependent Claim
24 words
A radiation sensing array as set forth in claim 5 wherein said relatively thin semiconductor has a thickness of not more than 1 micron.
Claim 11
Dependent Claim
21 words
A radiation sensing array as set forth in claim 8 wherein said substrate has a total thickness of about 10 microns.
References Cited (Backward Citations)
US3739240A
Cited
US3757123A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-02-03 | 1978-08-05 | 1979-02-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-02-03 | 1982-08-05 | 1983-02-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-02-03 | 1986-08-05 | 1987-02-04 | $7700.00 | Window Closed / Lapsed |