US4000508A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ohmic contacts to p-type mercury cadmium telluride
Assignee: Honeywell Inc
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Filing: 1975-07-17
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Granted: 1976-12-28
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Expires: 1995-07-17
Abstract
Abstract Ohmic contacts to p-type mercury cadmium telluride are prepared by depositing a Column IB metal on a surface of the p-type mercury cadmium telluride, depositing a buffer material on the Column IB metal, and contacting the buffer material with a bonding material which is capable of alloying with the Column IB metal. The buffer material prevents alloying between the Column IB metal and the bonding material.
Inventors
- 👤 Robert J. Hager
- 👤 Eric S. Johnson
- 👤 M. Walter Scott
- 👤 Ernest L. Stelzer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 11:18
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F30/2212; H10D; H10D62/00; H10D62/80; H10D62/86; H10D62/862; H10D64/00; H10D64/60; H10D64/62; H10P; H10P14/00; H10P14/40; H10P14/46; H10P14/47; H10W; H10W72/00; H10W72/90; H10W72/50; H10W72/531; H10W72/536; H10W72/59
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
62 words
An electrical contact to p-type mercury cadmium telluride, the contact comprising: a first amount of a Column IB metal in contact with the p-type mercury cadmium telluride; a second amount of a low melting temperature material; and a third amount of a buffer material interposed between the first amount and the second amount to prevent alloying of the first and second amounts.
Claim 2
Dependent Claim
62 words
An electrical contact to p-type mercury cadmium telluride, the contact comprising: a first amount of a Column IB metal in contact with the p-type mercury cadmium telluride; a second amount of a low melting temperature material; and a third amount of a buffer material interposed between the first amount and the second amount to prevent alloying of the first and second amounts.
Claim 3
Dependent Claim
27 words
The electrical contact of claim 1 and further comprising: a region in the p-type mercury cadmium telluride proximate the first amount, the region containing Column IB ions.
Claim 4
Dependent Claim
13 words
The electrical contact of claim 2 wherein the region is formed by diffusion.
Claim 5
Dependent Claim
13 words
The electrical contact of claim 3 wherein the Column IB metal is gold.
Claim 6
Dependent Claim
14 words
The electrical contact of claim 1 wherein the buffer material is a transition metal.
Claim 7
Dependent Claim
12 words
The electrical contact of claim 5 wherein the buffer material is nickel.
Claim 8
Dependent Claim
24 words
The electrical contact of claim 1 wherein the material of the second amount is of the group consisting of indium, aluminum, and alloys thereof.
Claim 9
Dependent Claim
26 words
The electrical contact of claim 1 wherein the Column IB metal is gold, the low melting temperature material is indium, and the buffer material is nickel.
Claim 10
Dependent Claim
27 words
The electrical contact of claim 8 and further comprising: a region in the p-type mercury cadmium telluride proximate the first amount, the region containing Column IB ions.
Claim 11
Dependent Claim
44 words
The electrical contact of claim 1 wherein the low melting temperature material is of the group of materials which are donors in mercury cadmium telluride and which are capable of alloying with the Column IB metal at a temperature less than about 700° K.
Claim 12
Dependent Claim
44 words
The electrical contact of claim 10 wherein the buffer material is of the group of materials which do not substantially alloy with the Column IB metal or substantially react with the low melting temperature bonding material at a temperature less than about 700° K.
Claim 13
Dependent Claim
70 words
An electrical contact for use with a mercury cadmium telluride semiconductor device, the electrical contact comprising: a first amount of a Column IB metal; a second amount of a material of the group consisting of indium, aluminum, alloys of indium, and alloys of aluminum; and a third amount of a buffer material interposed between the first amount and the second amount to prevent alloying of the first and second amounts.
Claim 14
Dependent Claim
70 words
An electrical contact for use with a mercury cadmium telluride semiconductor device, the electrical contact comprising: a first amount of a Column IB metal; a second amount of a material of the group consisting of indium, aluminum, alloys of indium, and alloys of aluminum; and a third amount of a buffer material interposed between the first amount and the second amount to prevent alloying of the first and second amounts.
Claim 15
Dependent Claim
13 words
The electrical contact of claim 12 wherein the Column IB metal is gold.
Claim 16
Dependent Claim
14 words
The electrical contact of claim 12 wherein the buffer material is a transition metal.
Claim 17
Dependent Claim
12 words
The electrical contact of claim 12 wherein the buffer material is nickel.
Claim 18
Dependent Claim
22 words
The electrical contact of claim 15 wherein the Column IB metal is gold, and the material of the second amount is indium.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-12-28 | 1980-06-28 | 1980-12-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-12-28 | 1984-06-28 | 1984-12-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-12-28 | 1988-06-28 | 1988-12-28 | $7700.00 | Window Closed / Lapsed |