Semiconductor power component

Claim 2

A semiconductor power element comprising two successive opposed polarity planar pn junctions, said element being positively tapered on its lateral surface in the regions of both pn junctions to form an average angle of both tapers of between 30° and 60°, the pn junctions appearing on the lateral surface of the semiconductor element outside of the tapers, the places on the lateral surface where the tapers begin being separated from the adjacent locations of emergence of the pn junctions on the lateral surface by no more than 30% of the thickness of the region between the two pn junctions.

Claim 3

A semiconductor power element comprising two successive opposed polarity planar pn junctions, said element being positively tapered on its lateral surface in the regions of both pn junctions to form an average angle of both tapers of between 30° and 60°, the straight lines intersecting the central axis of the element and fitted to the tapers by the method of least squares intersecting a straight line parallel to the central axis and tangent to the bottom of the groove in two points which are separated by a distance of at least 40 μm, the mentioned distance being no greater than 20% of the thickness of the region between the two pn junctions.

Claim 4

A semiconductor power element comprising two successive opposed polarity planar pn junctions, said element being positively tapered on its lateral surface in the regions of both pn junctions to form an average angle of both tapers of between 30° and 60°, the straight lines intersecting the central axis of the element and fitted to the tapers by the method of least squares intersecting a straight line parallel to the central axis and tangent to the bottom of the groove in two points which are separated by a distance of at least 40 μm, the mentioned distance being no greater than 20% of the thickness of the region between the two pn junctions.

Claim 5

A semiconductor power element comprising two successive opposed polarity planar pn junctions, said element being positively tapered on its lateral surface in the regions of both pn junctions to form an average angle of both tapers of between 30° and 60°, the pn junctions appearing on the lateral surface of the semiconductor element outside of the tapers, the places on the lateral surface where the tapers begin being separated from the adjacent points of emergence of the pn junctions on the lateral surface by 15-25% of the thickness of the zone between the two pn junctions.

Claim 6

A semiconductor power element comprising two successive opposed polarity planar pn junctions, said element being positively tapered on its lateral surface in the regions of both pn junctions to form an average angle of both tapers of between 30° and 60°, the pn junctions appearing on the lateral surface of the semiconductor element outside of the tapers, the places on the lateral surface where the tapers begin being separated from the adjacent points of emergence of the pn junctions on the lateral surface by 15-25% of the thickness of the zone between the two pn junctions.