Semiconductor device with double positive bevel
Abstract
Abstract To improve the reverse voltage breakdown characteristics of a semiconductor body having a junction therein formed by zones of dissimilar resistivities the periphery of the body adjacent the junction is beveled. With a positive bevel (lowest cross section zone having the highest resistivity) the reverse voltage breakdown characteristics improve progressively as the angle between the junction and the beveled periphery decreases. With two junction bodies having a higher resistivity N or P central zone between P or N zones, respectively, of lower resistivity a positive bevel may be provided at each junction so that a pulleylike concave periphery results with the minimum cross section of the body appearing in the central zone.
Inventors
- 👤 Gerald C Huth
- 👤 Robert L Davies
Bibliographic Details
Claims Analysis
Total Claims: 1References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-04-19 | 1974-10-19 | 1975-04-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-04-19 | 1978-10-19 | 1979-04-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-04-19 | 1982-10-19 | 1983-04-20 | $7700.00 | Window Closed / Lapsed |