Nondestructive charge sensing in a charge coupled device

Claim 2

A structure for nondestructively sensing charge in a charge coupled device comprising: a charge storage body of one conductivity type; a dielectric layer disposed over the body; a plurality of storage electrodes interleaved with transfer electrodes disposed over the dielectric layer for controlling the sequential transfer of mobile charges along said charge storage body in response to clock voltages applied thereto; the structure comprising: a region of opposite conductivity type at the surface of said body contiguous with and non-overlapping both one of said storage electrodes and a following one of said transfer electrodes; and capacitive input monitor means, connected to said region for nondestructively monitoring the mobile charges transferred to the region as they are being transferred along the device.

Claim 3

A structure for nondestructively sensing charge in a charge coupled device comprising: a semiconductor substrate of one conductivity type; a dielectric layer disposed over the substrate having a gate oxide channel encompassed by field oxide regions; a plurality of lower level storage electrodes interleaved with higher level transfer electrodes disposed over the gate oxide channel for controlling the sequential transfer of mobile charges along the adjacent surface of said substrate in response to clock voltages applied thereto; the structure comprising: a region of opposite conductivity type at said surface of said substrate contiguous with and non-overlapping both one of said storage electrodes and a following one of said transfer electrodes; and a field effect transistor having its gate electrode connected to said opposite conductivity region, and its source and drain electrodes connected in series with a load resistor to a source of operating voltage, to monitor the mobile charges being transferred along the device across the load resistor.

Claim 4

A structure for nondestructively sensing charge in a charge coupled device comprising: a semiconductor substrate of one conductivity type; a dielectric layer disposed over the substrate having a gate oxide channel encompassed by field oxide regions; a plurality of lower level storage electrodes interleaved with higher level transfer electrodes disposed over the gate oxide channel for controlling the sequential transfer of mobile charges along the adjacent surface of said substrate in response to clock voltages applied thereto; the structure comprising: a region of opposite conductivity type at said surface of said substrate contiguous with and non-overlapping both one of said storage electrodes and a following one of said transfer electrodes; and a field effect transistor having its gate electrode connected to said opposite conductivity region, and its source and drain electrodes connected in series with a load resistor to a source of operating voltage, to monitor the mobile charges being transferred along the device across the load resistor.

Claim 5

A structure as defined in claim 2 which additionally includes a further field effect transistor having its source and drain connected between said opposite conductivity region and said source of operating voltage and its gate connected to a further clock for removing any residual charge after transfer from said region.

Claim 6

A structure as defined in claim 3 in which the opposite conductivity regions are displaced laterally from the sides of the gate oxide channel and the channel is extended laterally to meet said region.