Bipolar logic having graded power

Claim 1

A semiconductor integrated circuit system comprising: a. first and second semiconductor circuits each being comprised of: i. a semiconductor body of one conductivity type, ii. a plurality of pairs of first and second mutually spaced regions of opposite conductivity type in said body, each first region constituting the emitter and each second region constituting the collector of a lateral transistor, iii. a respective plurality of third regions of said one conductivity type, one such third region respectively adjacent to each of said second regions, each second region constituting the base and each third region constituting the collector of an inverse vertical transistor, and iv. means coupling each of said first regions in common, v. said semiconductor body constituting a common base region for each of said lateral transistors and a common emitter region for each of said vertical transistors; and b. power input means including a current regulator coupled to provide an approximately constant current between the third region and the commonly coupled first regions of each of said first and second circuits; c. each of the first regions of said first circuit being larger in size than each of the first regions of said second circuit wherein a greater quantity of current is injected into each of said vertical transistors of said first circuit than is injected into each of said vertical transistors of said second circuit.