MIS structures for background rejection in infrared imaging devices

Claim 2

A CID sensing array of sensing sites, each sensing site comprising: a. an optically sensitive receiver MIS capacitor for receiving incident radiation from a scene and storing signal and background charge corresponding to said incident radiation thereon; b. a pair of optically insensitive MIS storage capacitors, said storage capacitors being coupled together, one of said pair being an X-storage capacitor and the other of said pair a Y-storage capacitor, and c. an optically insensitive transfer control MIS capacitor disposed in an overlapping manner between and coupled to said receiver capacitor and to said pair of storage capacitors for controlling the transfer of charge between said receiver and storage capacitors, d. and wherein said array is comprised of a two-dimensional array of sensing sites having rows of X-storage capacitors and columns of Y-storage capacitors.

Claim 3

The array of claim 1 further comprising first terminal line means for simultaneously and equally biasing the X storage capacitors of each said row, one row at a time, and second terminal line means for simultaneously and equally biasing the Y-storage capacitors of each said column one column at a time; third terminal line means for simultaneously and equally biasing the receiver capacitors of each said sensing site; and fourth terminal line means for simultaneously and equally biasing the transfer capacitors of each said sensing site.

Claim 4

An imaging system comprising: a. an array of radiation sensing sites, each site comprising: 1. an optically sensitive receiver MIS capacitor for receiving incident radiation from a scene and storing signal and background charge corresponding to incident radiation thereon; 2. an optically insensitive storage MIS capacitor for storing charge transferred from said receiver capacitor; 3. an optically insensitive transfer control MIS capacitor disposed between and coupled to said receiver capacitor and to said storage capacitor for controlling the transfer of charge between said receiver and storage capacitor; b. a storage cycle control means: 1. for transferring a first quantity of charge substantially corresponding to said signal charge to said storage capacitor; 2. for retaining storage of a second quantity of charge substantially corresponding to background charge on said receiver capacitor; and 3. for discharging said second quantity from said receiver capacitor subsequent to the transfer of said first quantity, thereby to complete one storage cycle for each said sensing site; and 4. for cycling each said sensing site through a predetermined plurality of storage cycles; and c. drive control circuit means for discharging the stored charge from the storage capacitor of each said sensing site after said sensing sites have been cycled through said plurality of storage cycles.

Claim 5

An imaging system comprising: a. an array of radiation sensing sites, each site comprising: 1. an optically sensitive receiver MIS capacitor for receiving incident radiation from a scene and storing signal and background charge corresponding to incident radiation thereon; 2. an optically insensitive storage MIS capacitor for storing charge transferred from said receiver capacitor; 3. an optically insensitive transfer control MIS capacitor disposed between and coupled to said receiver capacitor and to said storage capacitor for controlling the transfer of charge between said receiver and storage capacitor; b. a storage cycle control means: 1. for transferring a first quantity of charge substantially corresponding to said signal charge to said storage capacitor; 2. for retaining storage of a second quantity of charge substantially corresponding to background charge on said receiver capacitor; and 3. for discharging said second quantity from said receiver capacitor subsequent to the transfer of said first quantity, thereby to complete one storage cycle for each said sensing site; and 4. for cycling each said sensing site through a predetermined plurality of storage cycles; and c. drive control circuit means for discharging the stored charge from the storage capacitor of each said sensing site after said sensing sites have been cycled through said plurality of storage cycles.

Claim 6

The system of claim 3 wherein said sites are formed in an InSb semiconductor material.

Claim 7

The system of claim 3 wherein the stored charge discharged from said storage capacitor is injected into the substrate of the storage capacitor, said system further comprising signal processing means for integrating a displacement current induced in said substrate by the injected charge.

Claim 8

The system of claim 5 wherein said sites are arranged in a two-dimensional array of rows and columns and said drive control means further comprises X and Y-drive control means for scanning said array.