Patent US3976873A successfully refreshed from Google Patents.
US3976873A
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Tunable electroabsorptive detector
Assignee: United States Department of the Navy
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Filing: 1975-05-08
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Granted: 1976-08-24
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Expires: 1995-05-08
Abstract
Abstract A tunable, electroabsorptive, semiconductor detector or detector-modulator for detecting or modulating radiation near the absorptive edge of the detector, which edge can be tunably shifted by back biasing.
Inventors
- 👤 Nicholas Bottka
- 👤 Edward A. Teppo
- 👤 Victor L. Rehn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:05
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/95; H10F77/953; G; G02; G02F; G02F1/00; G02F1/01; G02F1/015; G02F1/0155; G02F1/0157
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
152 words
An optical radiation electroabsorptive device for selectively modulating transmitted optical frequencies and detecting other optical wavelengths of incident radiation frequencies near the absorption edge of the device comprising: a semiconductor structure supportive of the Franz-Keldysh effect by shifting the absorption edge of the structure in response to application of an electric field, having a plurality of layers of N-type material and at least one layer of P-type material, wherein one of the layers of the N-type material is the first of said layers in the path of said radiation, the layer of P-type material is most remote of said layers from the source of said radiation, and one other layer of said N-type material is adjacent said P-type material; and means coupled to said structure for selectively establishing said electric field and predeterminedly shifting said absorption edge; such that frequencies of said incident radiation are selectively modulated and absorbed by said structure.
Claim 2
Dependent Claim
152 words
An optical radiation electroabsorptive device for selectively modulating transmitted optical frequencies and detecting other optical wavelengths of incident radiation frequencies near the absorption edge of the device comprising: a semiconductor structure supportive of the Franz-Keldysh effect by shifting the absorption edge of the structure in response to application of an electric field, having a plurality of layers of N-type material and at least one layer of P-type material, wherein one of the layers of the N-type material is the first of said layers in the path of said radiation, the layer of P-type material is most remote of said layers from the source of said radiation, and one other layer of said N-type material is adjacent said P-type material; and means coupled to said structure for selectively establishing said electric field and predeterminedly shifting said absorption edge; such that frequencies of said incident radiation are selectively modulated and absorbed by said structure.
Claim 3
Dependent Claim
73 words
The device of claim 1 wherein the layer of N-type material first in the path of said radiation is a substrate region having an anti-reflectance coating on its surface exposed to the incident radiation, the layer of N-type material adjacent said P-type material is the active region whereat modulation occurs, and said plurality of N-type materials further include a layer sandwiched between said substrate region and said active region as a buffer zone.
Claim 4
Dependent Claim
13 words
The device of claim 2 wherein said structure comprises layers of Gallium Arsenide.
Claim 5
Dependent Claim
44 words
The device of claim 3 wherein said substrate region is GaAs, said buffer zone is GaAs w Sb 1 -w , said active region is low dopant GaAs x Sb 1 -x , and said P-type material is GaAs y Sb 1 -y .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-08-24 | 1980-02-23 | 1980-08-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-08-24 | 1984-02-23 | 1984-08-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-08-24 | 1988-02-23 | 1988-08-24 | $7700.00 | Window Closed / Lapsed |