Patent US3975211A successfully refreshed from Google Patents.
US3975211A
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Solar cells and method for making same
Assignee: Westinghouse Electric Corp
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Filing: 1975-03-28
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Granted: 1976-08-17
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Expires: 1995-03-28
Abstract
Abstract Solar cell elements are produced in accordance with the present invention in which a Cu 2 S thin film is epitaxially formed on a CdS film by vacuum deposition in a heterojunction forming relationship. By a first method a Cu 2 S layer on the order of 1/100 micron in thickness is formed on a CdS polycrystalline thin film by dipping in a solution of cuprous ions. The CdS film itself is less than 5 microns thick and rests on a conductive substrate. After the dipping step the Cu 2 S film is increased to a thickness on the order of 1/10 micron by vapor evaporation of an additional amount of Cu 2 S. By a second method both the CdS and Cu 2 S are entirely vapor deposited on a substrate to achieve approximately the same final structure as the first method.
Inventors
- 👤 Fred A. Shirland
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 09:33
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/125; H10F10/00; H10F10/10; H10F10/16; H10F10/169; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/265; H10P14/29; H10P14/2901; H10P14/2923; H10P14/32; H10P14/3202; H10P14/3224; H10P14/3228; H10P14/34; H10P14/3402; H10P14/3436; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S148/00; Y10S148/063; Y10S148/064; Y10S148/115; Y10S148/12; Y10S148/122; Y10S148/169
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
58 words
A method for making a solar cell structure comprising the steps: a. dipping a polycrystalline CdS thin film into a solution containing cuprous ions, thereby forming a first polycrystalline Cu 2 S thin film layer on said CdS film and b. depositing a second Cu 2 S layer on said first Cu 2 S layer by vacuum deposition.
Claim 2
Independent Claim
58 words
A method for making a solar cell structure comprising the steps: a. dipping a polycrystalline CdS thin film into a solution containing cuprous ions, thereby forming a first polycrystalline Cu 2 S thin film layer on said CdS film and b. depositing a second Cu 2 S layer on said first Cu 2 S layer by vacuum deposition.
Claim 3
Dependent Claim
52 words
A method as set forth in claim 1 wherein said CdS film is less than about 5 microns thick, said Cu 2 S layer formed by step (a) is on the order of 0.01 micron and said Cu 2 S layer formed by step (b) is on the order of 0.1 micron.
Claim 4
Independent Claim
54 words
A method for making a solar cell structure comprising the steps: a. depositing a polycrystalline thin film layer of CdS on a conductive substrate by vacuum deposition; and b. abruptly halting said CdS deposition while simultaneously abruptly initiating vacuum deposition of a polycrystalline thin film layer of Cu 2 S on said CdS layer.
Claim 5
Independent Claim
54 words
A method for making a solar cell structure comprising the steps: a. depositing a polycrystalline thin film layer of CdS on a conductive substrate by vacuum deposition; and b. abruptly halting said CdS deposition while simultaneously abruptly initiating vacuum deposition of a polycrystalline thin film layer of Cu 2 S on said CdS layer.
Claim 6
Dependent Claim
27 words
A method as set forth in claim 3 wherein a shutter is operated to halt step (a) and abruptly initiate step (b) during a single vacuum pump-down.
Claim 7
Dependent Claim
73 words
A solar cell comprising a conductive substrate, a polycrystalline CdS thin film layer disposed on said substrate, a polycrystalline Cu 2 S thin film layer disposed on said CdS layer, said Cu 2 S layer comprising an ion-exchange produced first thin portion penetrating only partly into the grain boundaries of the CdS layer and a vapor deposited second portion overlying said first thin portion, said second portion exceeding said first portion in thickness.
Claim 8
Dependent Claim
73 words
A solar cell comprising a conductive substrate, a polycrystalline CdS thin film layer disposed on said substrate, a polycrystalline Cu 2 S thin film layer disposed on said CdS layer, said Cu 2 S layer comprising an ion-exchange produced first thin portion penetrating only partly into the grain boundaries of the CdS layer and a vapor deposited second portion overlying said first thin portion, said second portion exceeding said first portion in thickness.
Claim 9
Dependent Claim
57 words
A solar cell as set forth in claim 5 wherein said CdS layer has a thickness of about 5 microns, said first portion of said Cu 2 S layer has a thickness on the order of 0.01 micron, and said second portion of said Cu 2 S layer has a thickness on the order of 0.1 micron.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-08-17 | 1980-02-16 | 1980-08-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-08-17 | 1984-02-16 | 1984-08-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-08-17 | 1988-02-16 | 1988-08-17 | $7700.00 | Window Closed / Lapsed |